IXFH98N60X3

IXFH98N60X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated G TO-247 (IXFH) S G Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS dv/dt IS  IDM, VDD  VDSS, TJ  150°C PD Maximum Ratings 98 A 160 A TC = 25C 20 A TC = 25C 2.8 J 50 V/ns TC = 25C 960 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 °C TJ TL Md Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque = 600V = 98A  30m Nm/lb.in 6 g Weight S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  1.13 / 10 D   High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V   ©2021Littelfuse, Inc. 5.0 V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C 50 A 2.5 mA 30 m DS101035B(04/21) IXFH98N60X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 38 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 64 S 2.0  6250 pF 10000 pF 41 pF 285 1560 pF pF Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 35 ns 13 ns 76 ns 6 ns 90 nC 31 nC 25 nC 0.13 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 49A, -di/dt = 200A/µs 98 A 392 A 1.4 V 220 4.1 37.6 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFH98N60X3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 100 280 V GS = 10V 90 V GS = 10V 240 9V 80 60 I D - Amperes I D - Amperes 9V 200 70 8V 50 7V 40 6V 30 160 8V 120 80 7V 40 6V 20 10 5V 5V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 3.2 0 5 10 15 20 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 49A Value vs. Junction Temperature 100 3.4 VGS = 10V 90 9V VGS = 10V 3.0 80 2.6 8V RDS(on) - Normalized I D - Amperes 70 60 7V 50 40 6V 30 I 2.2 D = 98A 1.8 I 1.4 D = 48A 1.0 20 5V 0.6 10 4V 0 0.2 0 1 2 3 4 5 6 7 8 -50 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 49A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.5 150 1.2 VGS = 10V BV DSS 1.1 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized -25 VDS - Volts TJ = 125oC 3.0 2.5 2.0 TJ = 25oC 1.5 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 40 80 120 160 I A - Amperes ©2021Littelfuse, Inc. 200 240 280 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFH98N60X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 140 100 100 I D - Amperes I D - Amperes 80 TJ = - 40oC VDS = 10V 120 60 40 25oC 80 125oC 60 40 20 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGS - Volts TC - Degrees Centigrade Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 350 120 TJ = - 40oC VGS = 10V 100 300 250 I S - Amperes g f s - Siemens 80 25oC 60 125oC 40 200 150 TJ = 125oC 100 TJ = 25oC 20 50 0 0 0 20 40 60 80 100 120 0.2 140 0.4 0.6 0.8 1.2 1.4 1.6 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 V DS = 300V I D = 49A I G = 10mA Ciss 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 1 VSD - Volts I D - Amperes 6 5 4 3 2 1,000 Coss 100 10 f = 1 MHz 1 C rss 1 0 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1000 IXFH98N60X3 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 60 RDS(on) Limit 50 25µs I D - Amperes EOSS - MicroJoules 100 40 30 100µs 10 20 TJ = 150oC TC = 25o C Single Pulse 1 10 1ms 10ms 0 0.1 0 100 200 300 400 500 600 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second ©2021Littelfuse, Inc. IXYS REF: F_98N60X3 (7T7) 11-17-20 IXFH98N60X3 TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source Littelfuse reserves the right to change limits, test conditions and dimensions. IXFH98N60X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2021Littelfuse, Inc.