IXFL100N50P

IXFL100N50P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   500V 68A  52m 200ns ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 68 A IDM TC = 25C, Pulse Width Limited by TJM 250 A IA EAS TC = 25C TC = 25C 100 5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 625 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 40..120 / 9..27 N/lb. 2500 3000 V~ V~ 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60 Hz, RMS IISOL  1 mA t = 1 min t=1s Weight G D Isolated Tab S G = Gate S = Source D = Drain Features      Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS 500 VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 50A, Note 1 3.0 AApplications V 5.0 V 200 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings 25 A 2 mA      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation 52 m DS99563F(8/17) IXFL100N50P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 20V, ID = 50A, Note 1 80 S 20 nF 1700 pF 140 pF 36 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RG = 1 (External) Qg(on) Qgs ISOPLUS264 (IXFL) OUTLINE 29 ns 110 ns 26 ns 240 nC 96 nC 78 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 50A Qgd 1 = Gate 2,4 = Drain 3 = Source 0.20C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 250 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/s Note 0.6 6.0 VR = 100V, VGS = 0V 200 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL100N50P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 220 VGS = 10V 8V 90 180 80 7V I D - Amperes 60 50 40 6V 30 8V 160 70 I D - Amperes VGS = 10V 9V 200 140 120 7V 100 80 60 20 40 10 20 5V 0 6V 0 0 1 2 3 4 5 0 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 100 3.2 VGS = 10V 90 VGS = 10V 2.8 80 7V RDS(on) - Normalized 70 I D - Amperes 15 VDS - Volts VDS - Volts 60 50 6V 40 30 2.4 I D = 100A 2.0 I D = 50A 1.6 1.2 20 5V 10 0.8 0 0.4 0 2 4 6 8 10 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current 3.2 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 80 VGS = 10V 70 2.8 60 o TJ = 125 C 2.4 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.6 50 40 30 o TJ = 25 C 20 1.2 10 0 0.8 0 20 40 60 80 100 120 140 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFL100N50P Fig. 7. Input Admittance Fig. 8. Transconductance 160 160 140 140 120 120 o TJ = - 40 C o g f s - Siemens I D - Amperes 25 C 100 80 o TJ = 125 C o 25 C 60 100 o 125 C 80 60 o - 40 C 40 40 20 20 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 VGS - Volts 80 100 120 140 160 180 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 250V 9 250 I D = 50A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 60 150 100 6 5 4 3 o TJ = 125 C 2 50 o TJ = 25 C 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 50 VSD - Volts 100 150 200 250 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit 10,000 100μs 100 I D - Amperes Capacitance - PicoFarads Ciss C oss 1,000 1ms 10 10ms o TJ = 150 C o TC = 25 C Single Pulse Crss 100 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFL100N50P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N50P (9S-745) 2-08-06-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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