IXFL40N110P

IXFL40N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   1100V 21A  280m 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1100 V VDGR TJ = 25C to 150C, RGS = 1M 1100 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS 21 A 100 A TC = 25C TC = 25C 20 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 15 V/ns PD TC = 25C 357 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 20..120 / 4.5..27 N/lb 2500 3000 V~ V~ 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60 Hz, RMS IISOL  1 mA t = 1 min t=1s Weight G S D G = Gate D = Drain Isolated Tab S = Source Features      Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 20A, Note 1 AApplications V   TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved 6.5 Easy to Mount Space Savings V  300 nA  50 A 3 mA  DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation 280 m DS99900B(8/17) IXFL40N110P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 20V, ID = 20A, Note 1 32 S 19 nF 1070 pF 46 pF 1.65  53 ns 55 ns 110 ns 54 ns 310 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 20A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 20A Qgd 95 nC 142 nC RthJC 0.35C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 40 A Repetitive, Pulse Width Limited by TJM 160 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 20A, -di/dt = 100A/s Note 2.2 16.0 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL40N110P Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 40 80 VGS = 10V VGS = 10V 35 70 60 25 50 20 I D - Amperes I D - Amperes 9V 30 8V 15 10 9V 40 30 8V 20 5 10 7V 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 3.2 40 VGS = 10V 9V 35 RDS(on) - Normalized 8V 25 20 15 7V 10 VGS = 10V 2.8 30 I D - Amperes 20 VDS - Volts VDS - Volts 2.4 I D = 40A 2.0 I D = 20A 1.6 1.2 0.8 5 6V 0 0.4 0 5 10 15 20 25 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current 2.6 VGS = 10V 2.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 24 o TJ = 125 C 20 2.0 16 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 12 8 o TJ = 25 C 1.2 4 1.0 0.8 0 0 10 20 30 40 50 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFL40N110P Fig. 8. Transconductance Fig. 7. Input Admittance 60 45 40 o TJ = - 40 C 50 35 25 g f s - Siemens I D - Amperes 30 o TJ = 125 C 20 o 25 C o - 40 C 15 40 o 25 C 30 o 125 C 20 10 10 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 VGS - Volts 25 30 35 40 45 50 350 400 450 500 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 120 16 VDS = 550V 14 100 I D = 20A I G = 10mA 12 VGS - Volts 80 I S - Amperes 20 60 o TJ = 125 C 40 10 8 6 o TJ = 25 C 4 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 VSD - Volts 200 250 300 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 Ciss 10,000 0.1 Z (th)JC - K / W Capacitance - PicoFarads 150 1,000 Coss 0.01 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_40N110P (97-R68) 12-15-11-A IXFL40N110P ISOPLUS i5-PakTM (IXFL) Outline PINS: 1 - Gate 3 - Drain © 2017 IXYS CORPORATION, All Rights Reserved 2 - Source 4 - Isolated Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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