IXFL82N60P

IXFL82N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   600V 55A  78m 200ns ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 55 A IDM TC = 25C, Pulse Width Limited by TJM 200 A IA EAS TC = 25C TC = 25C 82 5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 625 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 40..120 / 9..27 N/lb. 2500 3000 V~ V~ 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60 Hz, RMS IISOL  1 mA t = 1 min t=1s Weight G D Isolated Tab S G = Gate S = Source D = Drain Features      Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS 600 VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 41A, Note 1 3.0 AApplications V 5.0 V 200 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings 25 A 1 mA      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation 78 m DS99531F(8/17) IXFL82N60P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 20V, ID = 41A, Note 1 80 S 23 nF 1490 pF 200 pF 28 ns 23 ns 79 ns 24 ns 240 nC 96 nC 67 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 41A RG = 1 (External) Qg(on) Qgs ISOPLUS264 (IXFL) OUTLINE VGS = 10V, VDS = 0.5 • VDSS, ID = 41A Qgd 1 = Gate 2,4 = Drain 3 = Source 0.20C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 200 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/s Note 0.6 6.0 VR = 100V, VGS = 0V 200 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL82N60P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 180 80 VGS = 10V 8V 70 140 I D - Amperes 7V 60 I D - Amperes VGS = 10V 8V 160 50 40 6V 30 7V 120 100 80 60 6V 20 40 10 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 5 VDS - Volts 15 20 Fig. 4. RDS(on) Normalized to ID = 41A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 80 3.2 VGS = 10V 7V RDS(on) - Normalized 60 6V 50 40 30 20 VGS = 10V 2.8 70 I D - Amperes 10 VDS - Volts 2.4 I D = 82A 2.0 I D = 41A 1.6 1.2 5V 0.8 10 0 0.4 0 2 4 6 8 10 12 14 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 41A Value vs. Drain Current 3.2 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 60 VGS = 10V 2.8 25 TJ - Degrees Centigrade VDS - Volts 50 o 2.4 I D - Amperes RDS(on) - Normalized TJ = 125 C 2 1.6 40 30 20 o TJ = 25 C 10 1.2 0.8 0 0 20 40 60 80 100 120 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFL82N60P Fig. 8. Transconductance Fig. 7. Input Admittance 160 120 o TJ = - 40 C 140 o TJ = 125 C 100 o 25 C 120 o 80 g f s - Siemens I D - Amperes - 40 C 60 40 o 25 C 100 o 125 C 80 60 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 VGS - Volts 80 100 120 140 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 250 10 9 200 VDS = 300V I D = 41A 8 I G = 10mA VGS - Volts I S - Amperes 7 150 100 o TJ = 125 C 6 5 4 3 o TJ = 25 C 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 180 200 220 240 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 f = 1 MHz C iss 10,000 I D - Amperes Capacitance - PicoFarads RDS(on) Limit C oss 100 100μs 1ms 10 1,000 10ms o TJ = 150 C o C rss TC = 25 C Single Pulse DC 1 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXFL82N60P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_82N60P (9S) 2-01-06 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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