IXFM67N10

HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V Test Conditions Maximum Ratings TJ = 25°C to 150°C 100 V TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10 75N10 67 75 A A IDM TC = 25°C, pulse width limited by TJM 67N10 75N10 268 300 A A IAR TC = 25°C 67N10 75N10 67 75 A A EAR TC = 25°C 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C . VDSS VDGR 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight RDS(on) 67 A 25 mW 75 A 20 mW trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM67N10 IXFM75N10 Symbol ID25 TO-204 = 18 g, TO-247 = 6 g TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) Package unavailable D G = Gate, S = Source, G D = Drain, TAB = Drain Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier ● ● ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays ● ● ● ● VDSS VGS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V V 4 V ±100 nA TJ = 25°C TJ = 125°C 250 1 mA mA 67N10 75N10 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.025 0.020 ● ● ● ● Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density ● RDS(on) VGS = 10 V, ID = 0.5 ID25 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved W W ● ● 91521F (10/95) 1-4 IXFH 67N10 IXFM 67N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = ID25, pulse test 25 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 30 S 4500 pF 1600 pF 800 pF IXFH 75N10 IXFM 75N10 TO-247 AD (IXFH) Outline 20 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 60 110 ns td(off) RG = 2 W, (External) 80 110 ns 60 90 ns 180 260 nC 36 70 nC 85 160 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 0.42 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 67N10 75N10 ISM Repetitive; pulse width limited by TJM 67N10 75N10 VSD t rr A A 268 300 A A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.75 V IF = 25 A, -di/dt = 100 A/ms, TJ = 25°C VR = 25 V TJ = 125°C 200 300 ns ns . 67 75 Dim. Millimeter Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AE (IXFM) Outline Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved Inches Min. Max. Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050 2-4 IXFH 67N10 IXFM 67N10 Fig. 1 Output Characteristics 200 Fig. 2 Input Admittance 150 VGS = 10V TJ = 25°C IXFH 75N10 IXFM 75N10 125 9V ID - Amperes ID - Amperes 150 8V 100 7V 50 100 75 50 25 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 125°C 0 1 2 3 VDS - Volts 6 7 8 9 10 2.50 TJ = 25°C 2.25 1.2 VGS = 10V 1.1 VGS = 15V . 1.0 RDS(on) - Normalized 1.3 RDS(on) - Normalized 5 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.4 0.9 2.00 1.75 1.50 ID = 37.5A 1.25 1.00 0.75 0.8 0 20 40 60 80 0.50 -50 100 120 140 160 -25 0 ID - Amperes Fig. 5 Drain Current vs. Case Temperature 1.2 75N10 BV/VG(th) - Normalized 67N10 60 25 50 75 100 125 150 TJ - Degrees C Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.1 ID - Amperes 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 80 TJ = 25°C 0 40 20 VGS(th) BVDSS 1.0 0.9 0.8 0.7 0.6 0 -50 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 67N10 IXFM 67N10 Fig.7 Gate Charge Characteristic Curve IXFH 75N10 IXFM 75N10 Fig.8 Forward Bias Safe Operating Area 10 VDS = 50V ID = 37.5A IG = 1mA 9 8 100µs 100 ID - Amperes 7 VGS - Volts 10µs Limited by RDS(on) 6 5 4 3 1ms 10ms 10 100ms 2 1 0 1 0 25 50 75 100 125 150 175 200 1 10 Gate Charge - nCoulombs VDS - Volts Fig.10 Source Current vs. Source to Drain Voltage 6000 150 5000 125 IS - Amperes Ciss f = 1MHz VDS = 25V 3000 2000 Coss 100 75 50 . Capacitance - pF Fig.9 Capacitance Curves 4000 100 1000 TJ = 125°C TJ = 25°C 0.50 1.00 25 Crss 0 0 5 10 15 20 0 0.00 25 0.25 VDS - Volts 0.75 1.25 1.50 VSD - Volt Thermal Response - K/W Fig.11 Transient Thermal Impedance D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.