IXFN210N30X3

IXFN210N30X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 G S 300V 210A  4.6m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated = = miniBLOC, SOT-227 E153432  S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 300 300 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IL(RMS) IDM TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 210 200 650 A A A IA EAS TC = 25C TC = 25C 105 3 A J PD TC = 25C 695 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source Features         Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • IDSS, Note 1 High Power Density Easy to Mount Space Savings V Applications 4.5 V  200 nA 25 A 2.5 mA TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved. International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500V~ High Current Handling Capability Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) 3.8 D = Drain Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls 4.6 m DS100881B(11/19) IXFN210N30X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 84 RGi Gate Input Resistance Ciss Coss 140 S 2  24.2 nF 3.1 nF 7.7 pF 1100 4600 pF pF 38 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 40 ns 210 ns 15 ns 375 nC 107 nC 100 nC 0.18 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 210 A ISM Repetitive, Pulse Width Limited by TJM 840 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 105A, -di/dt = 100A/μs 190 1.4 15 ns  C A 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN210N30X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 220 900 VGS = 10V 8V 200 VGS = 10V 180 700 7V 160 8V 600 140 120 I D - Amperes I D - Amperes 9V 800 6V 100 80 500 7V 400 300 60 6V 200 40 5V 20 100 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 5V 0 2 4 6 8 VDS - Volts 220 2.4 VGS = 10V 8V 16 18 20 22 2.0 140 RDS(on) - Normalized 160 I D - Amperes 14 VGS = 10V 2.2 7V 180 6V 120 100 80 5V 60 1.8 I D = 210A 1.6 I D = 105A 1.4 1.2 1.0 40 0.8 20 4V 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 2.2 -25 0 25 VDS - Volts 75 100 125 150 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 3.5 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Drain Current 4.0 RDS(on) - Normalized 12 Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 200 10 VDS - Volts 3.0 o TJ = 125 C 2.5 2.0 1.5 o TJ = 25 C BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 100 200 300 400 500 600 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved. 700 800 900 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN210N30X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 280 220 200 160 200 140 I D - Amperes I D - Amperes VDS = 10V 240 External Lead Current Limit 180 120 100 80 160 120 o TJ = 125 C o 25 C 80 60 o - 40 C 40 40 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 400 600 o TJ = - 40 C VDS = 10V 350 500 400 o 250 25 C I S - Amperes g f s - Siemens 300 200 o 125 C 150 300 200 100 o TJ = 125 C 100 50 o TJ = 25 C 0 0 0 40 80 120 160 200 240 0.2 280 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 150V 8 I D = 105A Ciss Capacitance - PicoFarads 9 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 10,000 1,000 Coss Crss 100 10 2 f = 1 MHz 1 0 1 0 50 100 150 200 250 300 350 400 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN210N30X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 45 1000 RDS(on) Limit 40 25μs 100 100μs 30 I D - Amperes E OSS - MicroJoules 35 25 20 15 10 1ms 1 10 o TJ = 150 C 10ms o TC = 25 C 5 Fig. 15. Maximum Transient Thermal Impedance Single Pulse 0 1 0 50 100 150 200 250 DC 0.1 300 1 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_210N30X3(29-S301) 12-20-17-A IXFN210N30X3 SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN210N30X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved.