IXFN300N20X3

IXFN300N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 G S 200V 300A  3.5m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated = = miniBLOC, SOT-227 E153432  S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 200 200 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 300 200 700 A A A IA EAS TC = 25C TC = 25C 150 3.5 A J PD TC = 25C 695 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source Features         Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 150A, Note 1 TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved. International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500V~ High Current Handling Capability Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) High Power Density Easy to Mount Space Savings V Applications 4.5 V  200 nA 25 A 1.5 mA D = Drain Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls 3.5 m DS100845C(11/19) IXFN300N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 80 RGi Gate Input Resistance Ciss Coss 135 S 1.8  23.8 nF 4.0 nF 3.2 pF 1640 5640 pF pF 44 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 150A RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 150A Qgd 43 ns 184 ns 13 ns 375 nC 117 nC 94 nC 0.18 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr QRM IRM IF = 150A, -di/dt = 100A/μs 172 1.1 12.8 VR = 100V 300 A 1200 A 1.4 V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN300N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 300 900 VGS = 10V VGS = 10V 9V 250 8V 200 700 150 100 8V 600 7V I D - Amperes I D - Amperes 9V 800 500 7V 400 300 6V 200 6V 50 100 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 VDS - Volts 12 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.4 300 VGS = 10V VGS = 10V 2.2 9V 250 2.0 RDS(on) - Normalized 8V 200 I D - Amperes 10 VDS - Volts 150 7V 100 I D = 300A 1.6 I D = 150A 1.4 1.2 1.0 0.8 6V 50 1.8 0.6 5V 0.4 0 0 3.5 0.4 0.8 1.2 1.6 -50 2 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 2.5 BVDSS / VGS(th) - Normalized 3.0 RDS(on) - Normalized -25 VDS - Volts o TJ = 125 C 2.0 1.5 o TJ = 25 C 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 100 200 300 400 500 600 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved. 700 800 900 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN300N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 400 220 200 350 External Lead Current Limit 180 300 140 I D - Amperes I D - Amperes 160 120 100 80 250 200 150 o TJ = 125 C o 60 25 C 100 o - 40 C 40 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 400 800 o TJ = - 40 C 350 700 600 o 25 C 250 200 I S - Amperes g f s - Siemens 300 o 125 C 150 500 400 300 100 200 50 100 0 o TJ = 125 C o TJ = 25 C 0 0 50 100 150 200 250 300 350 400 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V Ciss Capacitance - PicoFarads I D = 150A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 50 100 150 200 250 300 350 400 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN300N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 30 RDS(on) Limit 25μs 25 100μs External Lead Current Limit 20 I D - Amperes E OSS - MicroJoules 100 15 10 10 1ms 1 10ms o TJ = 150 C 5 o DC TC = 25 C Single Pulse 100ms Fig. 15. Maximum Transient Thermal Impedance 0 0 50 100 1 150 0.1 200 1 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_300N20X3(29-S202) 6-22-17 IXFN300N20X3 SOT-227 Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN300N20X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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