IXFP12N65X2

IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 X2-Class HiPERFET Power MOSFET VDSS ID25 = 650V = 12A  310m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 12 A IDM TC = 25C, Pulse Width Limited by TJM 24 A IA TC = 25C 6 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 180 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 TO-220 (IXFP) G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 5.0 V 100 nA TJ = 125C  10 A 500 A Applications   310 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100749B(6/18) IXFA12N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 4.8 Ciss Coss IXFP12N65X2 IXFH12N65X2 8.0 S 4.0  1134 pF 712 pF 1 pF 42 132 pF pF 27 ns 26 ns 45 ns 12 ns 18.5 nC 6.7 nC 5.0 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 20 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.69 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 12 A ISM Repetitive, pulse Width Limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 6A, -di/dt = 100A/μs 155 1 13 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA12N65X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 24 12 VGS = 10V 8V VGS = 10V 9V 10 20 7V 6 6V 4 8V 16 I D - Amperes 8 I D - Amperes IXFP12N65X2 IXFH12N65X2 7V 12 8 6V 2 4 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 12 4.5 VGS = 10V 8V VGS = 10V 4.0 10 7V RDS(on) - Normalized 3.5 8 I D - Amperes 15 VDS - Volts 6V 6 4 5V 3.0 I D = 12A 2.5 2.0 1.5 I D = 6A 1.0 2 0.5 4V 0 0.0 0 2 4.0 4 6 8 10 12 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 3.5 RDS(on) - Normalized o TJ = 125 C 3.0 2.5 2.0 1.5 o TJ = 25 C 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.5 0.6 0 2 4 6 8 10 12 14 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 16 18 20 22 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA12N65X2 IXFP12N65X2 IXFH12N65X2 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 10 14 9 12 8 I D - Amperes I D - Amperes 10 8 6 o 7 TJ = 125 C 6 25 C o - 40 C o 5 4 3 4 2 2 1 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 12 40 o TJ = - 40 C 35 10 8 o I S - Amperes g f s - Siemens 30 25 C 6 o 125 C 4 25 20 o TJ = 125 C 15 o TJ = 25 C 10 2 5 0 0 0 1 2 3 4 5 6 7 8 9 0.3 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10000 10 VDS = 325V VGS - Volts Capacitance - PicoFarads I D = 6A 8 I G = 10mA 6 4 2 1000 Ciss 100 C oss 10 1 f = 1 MHz 0 Crss 0.1 0 2 4 6 8 10 12 14 16 18 20 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA12N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 9 RDS(on) Limit 8 25μs 7 10 6 I D - Amperes E OSS - MicroJoules IXFP12N65X2 IXFH12N65X2 5 4 100μs 1 3 0.1 2 o TJ = 150 C 1ms o TC = 25 C Single Pulse 1 10ms DC 0.01 0 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_12N65X2 (X3-S602) 9-08-16 IXFA12N65X2 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFP12N65X2 IXFH12N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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