IXFP36N20X3M

IXFP36N20X3M X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 200V = 36A  45m  (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM 36 A IDM TC = 25C, Pulse Width Limited by TJM 50 A IA TC = 25C 18 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 36 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ G G = Gate S = Source Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 500μA 2.5   IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 18A, Note 1  V  4.5 V 100 nA High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 5 A 100 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance Applications Characteristic Values Min. Typ. Max. BVDSS D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features  TL TSOLD DS 38 45 m DS100847D(5/19) IXFP36N20X3M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 18A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 16 Ciss Coss 26 S 1.6  1425 pF 280 pF 1.2 pF 130 400 pF pF 19 ns 30 ns 54 ns 20 ns 21 nC 8 nC 7 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 18A RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 18A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.5 C/W RthJC RthCS 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 36 A Repetitive, Pulse Width Limited by TJM 144 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 18A, -di/dt = 100A/μs 75 230 6 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP36N20X3M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 36 80 VGS = 10V 9V VGS = 10V 70 30 9V 8V 60 I D - Amperes I D - Amperes 24 7V 18 12 8V 50 40 7V 30 20 6V 6 6V 10 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 VDS - Volts 3.2 36 VGS = 10V 9V 8V 30 RDS(on) - Normalized 7V 24 VGS = 10V 2.8 30 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 18 6V 12 6 2.4 I D = 36A 2.0 I D = 18A 1.6 1.2 0.8 5V 0.4 0 0 3.8 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 VGS = 10V 3.4 BVDSS / VGS(th) - Normalized o TJ = 125 C 2.6 2.2 1.8 o TJ = 25 C 1.4 150 BVDSS 1.1 3.0 RDS(on) - Normalized 20 VDS - Volts 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.6 0 10 20 30 40 50 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 60 70 80 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP36N20X3M Fig. 8. Transconductance Fig. 7. Input Admittance 45 50 o 45 VDS = 10V 40 40 35 g f s - Siemens 35 I D - Amperes TJ = - 40 C VDS = 10V 30 25 20 o TJ = 125 C o 15 30 o 25 C 25 o 125 C 20 15 25 C o 10 - 40 C 10 5 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 5 10 15 20 35 40 45 50 20 22 180 200 10 140 9 120 VDS = 100V I D = 18A 8 100 I G = 10mA 7 VGS - Volts I S - Amperes 30 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 60 6 5 4 o TJ = 125 C 3 40 o TJ = 25 C 2 20 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.6 2 4 6 8 VSD - Volts 10 12 14 16 18 QG - NanoCoulombs Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 2.5 10,000 2.0 Ciss 1,000 100 EOSS - MicroJoules Capacitance - PicoFarads 25 I D - Amperes VGS - Volts Coss 10 Crss 1.5 1.0 0.5 f = 1 MHz 0.0 1 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 20 40 60 80 100 120 VDS - Volts 140 160 IXFP36N20X3M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 100 RDS(on) Limit 1 Z (th)JC - K / W I D - Amperes 10 100μs 1 0.1 0.01 o TJ = 150 C o TC = 25 C Single Pulse DC 0.1 1 10 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 1ms 10ms 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_36N20X3(22-S202) 6-28-17 IXFP36N20X3M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.