IXFP80N25X3

IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 = 250V = 80A  16m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) G D S TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 80 A IDM TC = 25C, Pulse Width Limited by TJM 220 A IA TC = 25C 40 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 390 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 3.0 5.5 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-3P TO-247 D (Tab) G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)   V 4.5 V 100 nA 5 350 TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 13 A A 16 m Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100753E(6/18) IXFP80N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 38 RGi Gate Input Resistance Ciss Coss 64 S 1.6  5430 pF 890 pF 1.6 pF 320 1410 pF pF 30 ns 17 ns 65 ns 8 ns 83 nC 27 nC 24 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXFQ80N25X3 IXFH80N25X3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.32 C/W RthJC RthCS TO-220 TO-247& TO-3P 0.50 0.25 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 80 A Repetitive, pulse Width Limited by TJM 320 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 40A, -di/dt = 100A/μs 120 600 10 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP80N25X3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 80 350 VGS = 10V 9V 70 VGS = 10V 300 8V 60 9V 250 50 I D - Amperes I D - Amperes IXFQ80N25X3 IXFH80N25X3 7V 40 30 6V 8V 200 150 7V 100 20 50 10 5V 0 6V 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 2 4 6 8 10 VDS - Volts 80 3.0 VGS = 10V 8V R DS(on) - Normalized I D - Amperes 7V 50 40 6V 30 20 4V 0 4.6 1 1.5 20 22 24 2.2 I D = 80A 1.8 I D = 40A 1.4 1.0 0.2 2 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 4.2 1.2 BVDSS / VGS(th) - Normalized 3.8 o RDS(on) - Normalized 18 0.6 5V 10 0.5 16 VGS = 10V 2.6 60 0 14 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 70 12 VDS - Volts TJ = 125 C 3.4 3.0 2.6 2.2 o TJ = 25 C 1.8 1.4 BVDSS 1.1 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.6 0 50 100 150 200 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 250 300 350 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP80N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFQ80N25X3 IXFH80N25X3 Fig. 8. Input Admittance 90 140 80 120 70 100 I D - Amperes I D - Amperes 60 50 40 30 80 60 o TJ = 125 C o 25 C 40 o - 40 C 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 140 400 o TJ = - 40 C 350 120 300 o 25 C I S - Amperes g f s - Siemens 100 80 o 125 C 60 250 200 150 o TJ = 125 C 40 100 o TJ = 25 C 20 50 0 0 0 20 40 60 80 100 120 0 140 0.2 0.4 0.6 I D - Amperes 0.8 1 1.2 1.4 1.6 1.8 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 125V I D = 40A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 0 1 0 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 14 RDS(on) Limit 25μs 100 10 100μs I D - Amperes E OSS - MicroJoules 12 8 6 4 10 1 o TJ = 150 C o TC = 25 C Single Pulse 2 1ms 0.1 0 0 50 100 150 200 250 10 300 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N25X3 (25-S301) 3-07-17-A IXFP80N25X3 TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFQ80N25X3 IXFH80N25X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.