IXFP90N20X3

IXFP90N20X3 IXFQ90N20X3 IXFH90N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 200V = 90A  12.8m  TO-220AB (IXFP) GD Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 90 A IDM TC = 25C, Pulse Width Limited by TJM 220 A IA TC = 25C 45 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 390 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-3P TO-247 D (Tab) TO-3P (IXFQ) Symbol TJ S 3.0 5.5 6.0 g g g G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V Applications V  100 nA  4.5 5 300 TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved  High Power Density Easy to Mount Space Savings 10.5 A A    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 12.8 m DS100802D(4/18) IXFP90N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 40 RGi Gate Input Resistance Ciss Coss 67 S 1.4  5420 pF 930 pF 4 pF 420 1300 pF pF 22 ns 26 ns 62 ns 13 ns 78 nC 23 nC 22 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXFQ90N20X3 IXFH90N20X3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.32 C/W RthJC RthCS TO-220 TO-247 & TO-3P 0.50 0.25 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 90 A Repetitive, pulse Width Limited by TJM 360 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 45A, -di/dt = 100A/μs 95 360 7.6 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP90N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 400 90 VGS = 10V VGS = 10V 8V 80 350 70 7V 9V 300 I D - Amperes 60 I D - Amperes IXFQ90N20X3 IXFH90N20X3 50 6V 40 30 250 8V 200 150 7V 100 20 6V 5V 10 50 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.8 90 VGS = 10V 8V 80 15 VDS - Volts VGS = 10V 7V 2.4 RDS(on) - Normalized 70 I D - Amperes 60 50 6V 40 30 I D = 90A 2.0 I D = 45A 1.6 1.2 5V 20 0.8 10 4V 0.4 0 0 4.5 0.5 1 1.5 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 300 350 400 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP90N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFQ90N20X3 IXFH90N20X3 Fig. 8. Input Admittance 100 240 200 80 I D - Amperes I D - Amperes 160 60 40 120 80 o TJ = 125 C o 20 25 C 40 o - 40 C 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 180 400 o TJ = - 40 C 160 350 300 o 120 25 C I S - Amperes g f s - Siemens 140 100 o 125 C 80 60 250 200 150 o TJ = 125 C 100 40 o TJ = 25 C 50 20 0 0 0 40 80 120 160 200 0.2 240 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10 100000 VDS = 100V I D = 45A I G = 10mA Capacitance - PicoFarads VGS - Volts 8 6 4 2 10000 C iss 1000 Coss 100 Crss 10 f = 1 MHz 0 1 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFP90N20X3 Fig. 13. Output Capacitance Stored Energy IXFQ90N20X3 IXFH90N20X3 Fig. 14. Forward-Bias Safe Operating Area 1000 8 RDS(on) Limit 7 25μs 100 5 I D - Amperes EOSS - MicroJoules 6 4 3 2 100μs 10 1 o TJ = 150 C 1ms o TC = 25 C Single Pulse 1 0 DC 0.1 0 20 40 60 80 100 120 140 160 180 200 1 10 100 10ms 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_90N20X3(25-S202) 5-31-17-A IXFP90N20X3 TO-220 Outline IXFQ90N20X3 IXFH90N20X3 TO-247 Outline TO-3P Outline D A A2 A B E Q R S D2 D1 D P1 1 2 4 3 L1 E1 L A1 C b b2 b4 e Pins: 1 - Gate 3 - Source 2 - Drain Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 - Gate 2,4 - Drain 3 - Source