IXFR102N30P

PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS(on) ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25° C 60 A IDM TC = 25° C, pulse width limited by TJM 250 A IAR TC = 25° C 60 A EAR TC = 25° C 60 mJ EAS TC = 25° C 2.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 2500 °C V~ TJ TJM Tstg TL VISOL 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute FC Mounting force 22..130/5..29 Weight N/lb 5 g ISOPLUS247 (IXFR) E153432 G G = Gate S = Source BVDSS VGS = 0 V, ID = 250 µA 300 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 51 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved TJ = 125° C D = Drain Advantages l Characteristic Values Min. Typ. Max. (Isolated Tab) S Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) D l Easy to mount Space savings High power density V 5.0 V ±200 nA 25 250 µA µA 36 mΩ DS99247E(12/05) IXFR 102N30P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 51 A, pulse test 45 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 57 S 7500 pF 1150 pF 230 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 51 A td(off) RG = 3.3 Ω (External) 30 ns 28 ns 130 ns 30 ns 224 nC 50 nC 110 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 51 A Qgd ISOPLUS247 Outline 0.5 ° C/W RthJC RthCS ° C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 102 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 0.8 7 200 ns µC Α IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXFR 102N30P Fig. 2. Exte nde d Output Characte r is tics @ 25ºC Fig. 1. Output Characte r is tics @ 25ºC 250 110 V GS = 10V 9V 8V 100 90 9V 200 80 175 70 60 ID - Amperes ID - Amperes V GS = 10V 225 7V 50 40 6V 30 20 8V 150 7V 125 100 75 6V 50 10 5V 25 0 0 0.5 1 1.5 2 2.5 3 3.5 5V 0 4 0 V DS - V olts Fig. 3. Output Characte r is tics @ 125ºC 4 6 8 10 12 V DS - V olts 14 16 18 20 Fig. 4. RDS(on ) Norm alize d to ID = 51A V alue vs . Junction Te m pe r atur e 2.8 110 V GS = 10V 9V 8V 90 2.6 V GS = 10V 2.4 80 RDS(on) - Normalized 100 ID - Amperes 2 7V 70 60 50 6V 40 30 20 2.2 2 1.8 1.6 I D = 102A 1.4 I D = 51A 1.2 1 0.8 10 0.6 5V 0 0.4 0 1 2 3 4 5 V DS - V olts 6 7 8 -50 9 Fig. 5. RDS(on) Nor m alize d to 25 50 75 100 125 150 Fig . 6. Dr ain Cu r r e n t vs . C as e T e m p e r atu r e 70 V GS = 10V 2.4 0 TJ - Degrees Centigrade ID = 51A V alue vs . Dr ain Cur re nt 2.6 -25 60 50 TJ = 125ºC 2 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 40 30 20 1.2 TJ = 25ºC 1 10 0 0.8 0 25 50 75 100 125 150 175 200 225 250 ID - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFR 102N30P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 150 100 90 80 TJ = -40ºC 25ºC 125ºC 70 100 gfs - Siemens ID - Amperes 125 75 50 TJ = 125ºC 25ºC -40ºC 25 60 50 40 30 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 25 50 75 V GS - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 125 150 175 200 Fig. 10. Gate Char ge 10 300 V DS = 150V 9 250 I D = 51A 8 I G = 10m A 7 200 V G S - Volts IS - Amperes 100 ID - A mperes 150 100 6 5 4 3 TJ = 125ºC 2 TJ = 25ºC 50 1 0 0 0.4 0.6 0.8 1 1.2 V SD - V olts 0 1.4 25 50 75 100 125 150 175 200 225 QG - nanoCoulombs Fig. 12. Fo r w ar d -Bias Safe Ope r atin g Ar e a Fig. 11. Capacitance 1000 10000 R DS (on) Lim it ID - Amperes Capacitance - picoFarads C iss 1000 C oss 25µs 100 100µs 1m s 10 10m s f = 1MH z TJ = 150ºC C rs s DC TC = 25ºC 1 100 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - V olts 1000 IXFR 102N30P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R(th)JC - ºC/W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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