IXFR120N20

IXFR120N20 HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   200V 105A  19.5m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 105 A ILRMS IDM Terminal Current Limit TC = 25C, Pulse Width Limited by TJM 76 480 A A IA EAS TC = 25C TC = 25C 120 3 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 417 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb 5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force G G = Gate S = Source = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate  Isolated Mounting Surface  2500V~ Electrical Isolation  Avalanche Rated  Fast Intrinsic Rectifier  Low RDS(ON) and QG Advantages   BVDSS VGS = 0V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1  V   4.0 Easy to Mount Space Savings High Power Density Applications Characteristic Values Min. Typ. Max. V 100 nA © 2013 IXYS CORPORATION, All Rights Reserved D Features  TJ = 125C Isolated Tab S  Weight Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D 100 A 2 mA   DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC & DC Motor Controls 19.5 m DS98586C(9/13) IXFR120N20 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf 70 S 9100 pF 2200 pF 1000 pF 40 ns 65 ns 110 ns 35 ns 360 nC 50 nC 170 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 60A RG = 1 (External) Qg(on) Qgs ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 60A Qgd 1 2 3 - Gate - Drain - Source 0.30C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 120 A ISM Repetitive, Pulse Width Limited by TJM 480 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 50A, -di/dt = -100A/s VR = -100V, VGS = 0V Note 1.1 13 250 ns μC A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.