IXFR12N100Q

HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr ≤ 300 µs 1.1 Ω 1.20 Ω N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, Pulse width limited by TJM IAR TC = 25°C EAR TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD Maximum Ratings 12N100 10N100 12N100 10N100 12N100 10N100 TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS V V ±20 ±30 V V 10 9 48 40 12 10 A A A A A A 30 mJ 5 V/ns Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features ● TC = 25°C TJ TJM Tstg 1000 1000 ISOPLUS 247TM 250 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g t = 1 min Weight Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(