IXFR140N20P

PolarHTTM HiPerFET IXFR 140N20P Power MOSFET VDSS = 200 V ID25 = 90 A RDS(on) ≤ 22 m Ω ≤ 200 ns trr ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 200 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25° C 90 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 280 A IAR TC = 25° C 60 A EAR TC = 25° C 100 mJ EAS TC = 25° C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 300 W -55 ... +175 175 -55 ... +150 °C °C °C 300 °C 2500 V~ TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute Md Terminal torque Mounting torque 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. Weight 5 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 140A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % V ISOPLUS247 (IXFR) E153432 G © 2006 IXYS All rights reserved TJ = 150° C 17 V ±200 nA 25 250 µA µA 22 mΩ mΩ S G = Gate S = Source (Isolated Tab) D = Drain Features l l l l l International standard isolated package UL recognized package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages l 5.0 D l l Easy to mount Space savings High power density DS99298E(12/05) IXFR 140N20P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 50 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 84 S 7500 pF 1800 pF 280 pF td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 100 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.5 ° C/W RthJC RthCS ISOPLUS247 ° C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 90 A ISM Repetitive 280 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 0.6 6 ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 200 ns µC Α IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 IXFR 140N20P Fig. 1. Output Characte r is tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 300 140 V GS = 10V 9V 8V 120 9V 240 100 210 I D - Amperes I D - Amperes V GS = 10V 270 80 7V 60 40 6V 8V 180 150 120 7V 90 60 20 6V 30 5V 0 0 0 0.5 1 1.5 2 0 2.5 1 2 3 V D S - V olts Fig. 3. Output Characte r is tics @ 150ºC 4 5 6 V D S - V olts 7 8 9 10 Fig. 4. RDS(on ) Norm alize d to ID = 70A V alue vs . Junction Te m pe r atur e 140 V GS = 10V 9V 8V 3 R D S ( o n ) - Normalized 120 I D - Amperes 100 7V 80 60 6V 40 5V 20 0 V GS = 10V 2.5 I D = 140A 2 I D = 70A 1.5 1 0.5 0 1 2 3 4 V D S - V olts 5 -50 6 -25 Fig. 5. RDS(on) Nor m alize d to 50 75 100 125 150 175 150 175 90 TJ = 175 ºC 80 3.5 Ext ernal Lead C urrent Lim it 70 3 2.5 I D - Amperes R D S ( o n ) - Normalized 25 TJ - Degrees Centigrade Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e ID = 70A V alue vs . Dr ain Cur re nt 4 0 V GS = 10V V GS = 15V 2 1.5 60 50 40 30 20 1 10 TJ = 25 ºC 0 0.5 0 50 100 150 200 I D - A mperes © 2006 IXYS All rights reserved 250 300 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade IXFR 140N20P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 225 120 110 200 100 90 80 - Siemens 150 125 60 fs 100 70 75 TJ = 150 ºC 50 25 ºC g I D - Amperes 175 25 ºC 40 150 ºC 30 20 -40 ºC 25 TJ = -40 ºC 50 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 40 80 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 160 200 240 Fig. 10. Gate Char ge 10 350 V DS = 100V 9 300 I D = 70A 8 250 I G = 10m A 7 V G S - Volts I S - Amperes 120 I D - A mperes 200 150 6 5 4 3 100 TJ = 150 ºC 2 50 TJ = 25 ºC 1 0 0 0.4 0.6 0.8 1 1.2 V S D - V olts 0 1.4 25 50 75 Q 100 125 150 175 200 225 250 G - nanoCoulombs Fig . 12. Fo r w ar d -Bias Safe Op e r atin g A r e a Fig. 11. Capacitance 100,000 1000 25µs R DS (o n ) Lim it Ciss 10,000 I D - Amperes Capacitance - picoFarads f = 1M Hz Cos s 1,000 100 100µs 1m s 10m s 10 Crs s DC TJ = 175 ºC TC = 25 ºC 100 1 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 VD S - V olts 100 1000 IXFR 140N20P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.