IXFR140N30P

IXFR140N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = =   300V 70A  28m 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 70 A 300 A TC = 25C 70 A EAS TC = 25C 5 J dV/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 300 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 2500 3000 V~ V~ 20..120 / 4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Force t = 1min t = 1s Weight Isolated Tab G = Gate S = Source D = Drain Features     Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Unclamped Inductive Switching (UIS) Rated Low package inductance - Easy to Drive and to Protect Fast Intrinsic Diode Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 70A, Note 1   V 5.0  Easy to Mount Space Savings High Power Density V 200 nA 25 A 1 mA TJ = 125C © 2017 IXYS CORPORATION, All rights reserved 20 28 m DS99570G(11/17) IXFR140N30P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 20V, ID = 70A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 70A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 70A Qgd ISOPLUS247 (IXFR) Outline 90 S 14.8 nF 1830 pF 55 pF 30 ns 30 ns 100 ns 20 ns 185 nC 72 nC 60 nC 0.42 C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 140 A ISM Repetitive, pulse width limited by TJM 560 A VSD IF = 70A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 25A, -di/dt = 100A/s 0.6 6.0 VR = 100V, VGS = 0V 200 ns μC A 1 - Gate 3 - Source 2 - Drain 4 - Isolated Note 1: Pulse test, t  300s; duty cycle, d  2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR140N30P o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 140 280 VGS = 10V 8V 120 100 200 7V I D - Amperes I D - Amperes VGS = 10V 8V 240 80 60 6V 40 160 7V 120 6V 80 20 40 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 2 4 6 140 3.2 VGS = 10V 8V 7V RDS(on) - Normalized I D - Amperes 12 14 16 18 20 6V 80 60 40 5V 20 VGS = 10V 2.8 100 2.4 I D = 140A 2.0 I D = 70A 1.6 1.2 0.8 0 0.4 0 1 2 3 4 5 6 7 8 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current 3.0 VGS = 10V Fig. 6. Maximum Drain Current vs. Case Temperature 80 70 o TJ = 125 C 2.6 60 2.2 I D - Amperes RDS(on) - Normalized 10 Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 120 8 VDS - Volts VDS - Volts 1.8 1.4 50 40 30 20 o TJ = 25 C 1.0 10 0.6 0 0 40 80 120 160 I D - Amperes © 2017 IXYS CORPORATION, All rights reserved 200 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR140N30P Fig. 8. Transconductance Fig. 7. Input Admittance 180 140 o TJ = - 40 C 160 120 o 25 C 100 120 g f s - Siemens I D - Amperes 140 o TJ = 125 C 100 o 25 C o - 40 C 80 o 125 C 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 160 180 200 Fig. 10. Gate Charge 300 10 VDS = 150V 9 250 I D = 70A 8 I G = 10mA 7 200 VGS - Volts I S - Amperes 100 I D - Amperes 150 o TJ = 125 C 100 6 5 4 3 o TJ = 25 C 50 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 VSD - Volts 60 80 100 120 140 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 f = 1 MHz RDS(on) Limit 10,000 1,000 I D - Amperes Capacitance - PicoFarads Ciss Coss 25μs 100 100μs 1ms 10 10ms 100 o TJ = 150 C DC o TC = 25 C Single Pulse Crss 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 VDS - Volts 1000 IXFR140N30P Fig. 13. Maximum Transient Thermal Impedance 1 Z ( th ) J C - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All rights reserved IXYS REF: F_140N30P (93)5-13-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.