Advanced Technical Data
HiPerFETTM
Power MOSFETs
IXFR14N100Q2
VDSS
=
=
ID25
RDS(on) =
Electrically Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
Low Rg, High dv/dt, Low trr
trr ≤ 300 ns
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
VGS
VGSM
Continuous
Transient
ID25
IDM
IAR
ISOPLUS247 (IXFR)
E153432
1000
1000
V
V
±30
±40
V
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
9.5
56
14
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
50
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
200
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
Applications
2500
3000
V~
V~
z
TJ
TJM
Tstg
TL
1.6 mm (0.063 in) from case for 10 s
VISOL
50/60 Hz, RMS, t = 1 min
ISOL = 1mA, t = 1 s
FC
1000 V
9.5 A
1.0 Ω
Mounting Force
G
G = Gate
E = Source
z
z
z
z
z
20..120 / 4.6..27 N/lb
5
g
ISOLATED TAB
E
C = Drain
Features
z
Weight
C
z
z
z
Double metal process for low gate
resistance
Epoxy meet UL 94 V-0, flammability
classification
Low RDS (on), low Qg
Avalanche energy and current rated
Fast intrinsic rectifier
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
1000
3.0
TJ = 25°C
TJ = 125°C
z
z
z
Easy to mount
Space savings
High power density
V
5.0
V
±200
nA
25
1
µA
mA
0.90
Ω
DS99229(11/04)
IXFR14N100Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = IT , pulse test
10
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
14
S
2700
pF
300
pF
100
pF
12
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
10
ns
td(off)
RG = 2 Ω (External),
28
ns
12
ns
83
nC
20
nC
40
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
RthJC
0.62
RthCK
0.25
ISOPLUS247 Outline
K/W
K/W
Note: Test current IT = 7A
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
14
A
ISM
Repetitive; pulse width limited by TJM
56
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
300
ns
µC
A
t rr
QRM
IRM
0.8
0.7
IF = IS, -di/dt = 100 A/µs, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXFR14N100Q2
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25 Deg. C
@ 25 deg. C
27
14
VGS = 10V
12
7V
21
I D - Amperes
10
I D - Amperes
VGS = 10V
8V
24
8
6V
6
4
18
7V
15
12
9
6V
6
2
3
5V
5V
0
0
0
2
4
6
8
10
12
0
14
5
10
Fig. 3. Output Characteristics
25
30
Junction Temperature
2.8
14
VG S = 10V
7V
VG S = 10V
2.5
10
R D S (on) - Normalized
12
I D - Amperes
20
Fig. 4. RDS(on) Normalized to ID25 Value vs.
@ 125 Deg. C
6V
8
6
4
5V
2
2.2
1.9
I D = 14A
1.6
1.3
I D = 7A
1
0.7
0
0.4
0
5
10
15
20
25
30
-50
-25
V DS - Volts
0
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Temperature
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
16
2.8
VG S = 10V
2.5
14
T J = 125º C
2.2
12
I D - Amperes
R D S (on) - Normalized
15
V DS - Volts
V DS - Volts
1.9
1.6
1.3
10
8
6
4
T J = 25º C
1
2
0.7
0
0
3
6
9
12
15
I D - Amperes
© 2004 IXYS All rights reserved
18
21
24
27
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
IXFR14N100Q2
Fig. 8. Transconductance
21
28
18
24
15
20
g f s - Siemens
I D - Amperes
Fig. 7. Input Admittance
12
9
T J = 120º C
25º C
6
T J = -40º C
25º C
125º C
16
12
8
-40º C
3
4
0
0
4
4.5
5
5.5
6
6.5
7
0
3
6
9
V GS - Volts
18
21
24
Fig. 10. Gate Charge
42
10
35
VD S = 500V
I D = 7A
I G = 10mA
8
28
VG S - Volts
I S - Amperes
15
I D - Amperes
Fig. 9. Source Current vs. Source-To-Drain
Voltage
21
TJ = 125º C
14
6
4
TJ = 25º C
2
7
0
0
0.3
0.5
0.7
0.9
1.1
1.3
0
10
V SD - Volts
20
30
40
50
60
70
80
90
Q G - nanoCoulombs
Fig.12.
12.Maximum
MaximumTransient
Transient Thermal
Thermal
Fig.
Resistance
Resistance
Fig. 11. Capacitance
11
10000
f = 1M Hz
C iss
R (th) J C - (ºC/W)
R (th) J C - (ºC/W)
Capacitance - pF
12
1000
C oss
0.1
0.1
100
C rss
10
0.01
0.01
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
11
110
0
1100
00
Pulse
PulseWidth
Width-- milliseconds
milliseconds
1000
