IXFR16N120P

IXFR16N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) = = ≤ ≤ 1200V 9A Ω 1.04Ω 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 9 A IDM TC = 25°C, Pulse Width Limited by TJM 35 A IA EAS TC = 25°C TC = 25°C 8 800 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 230 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V∼ 20..120/4.5..27 N/lb. z 5 g z TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation International Standard Packages Fast Recovery Diode Avalanche Rated Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. 1200 z BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ±30V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V 25 μA 2.5 mA RDS(on) VGS = 10V, ID = 8A, Note 1 3.5 TJ = 125°C V 6.5 1.04 Applications V z z z Ω z z © 2012 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High Voltage Switch-mode and Resonant-Mode Power Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99897B(10/12) IXFR16N120P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 8A, Note 1 11 Ciss VGS = 0V, VDS = 25V, f = 1MHz Coss Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr ISOPLUS247 (IXFR) Outline 17 S 6900 pF 390 pF 48 pF 1.4 Ω 35 ns 28 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 8A 66 ns tf RG = 2Ω (External) 35 ns 120 nC 37 nC 47 nC Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 8A Qgs Qgd 1 = Gate 2,4 = Drain 3 = Source 0.54 °C/W RthJC RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 16 A ISM Repetitive, Pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.5 V 300 ns trr IF = 8A, -di/dt = 100A/μs IRM VR = 100V, VGS = 0V QRM Note 1. 7.5 A 0.75 μC Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR16N120P Fig. 1. Output Characteristics T J = @ 25ºC Fig. 2. Extended Output Characteristics T J = @ 25ºC 16 20 12 7V 10 ID - Amperes ID - Amperes VGS = 10V 8V 24 VGS = 10V 8V 14 8 6 6V 7V 16 12 6V 8 4 4 2 5V 5V 0 0 0 2 4 6 8 10 12 14 16 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature Fig. 3. Output Characteristics T J = @ 125ºC 2.8 16 VGS = 10V 8V 7V 14 VGS = 10V 2.4 R DS(on) - Normalized 12 ID - Amperes 20 VDS - Volts VDS - Volts 10 6V 8 6 I D = 16A 2.0 I D = 8A 1.6 1.2 4 0.8 2 5V 0 0.4 0 5 10 15 20 25 30 35 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 10 VGS = 10V 2.2 TJ = 125ºC 8 1.8 ID - Amperes R DS(on) - Normalized 2.0 1.6 1.4 6 4 1.2 2 TJ = 25ºC 1.0 0 0.8 0 2 4 6 8 10 12 14 16 18 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 20 22 24 26 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR16N120P Fig. 7. Input Admittance 18 14 16 g f s - Siemens 10 TJ = - 40ºC 14 TJ = 125ºC 25ºC - 40ºC 12 ID - Amperes Fig. 8. Transconductance 16 8 6 4 12 25ºC 10 125ºC 8 6 4 2 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 2 4 6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 12 14 16 Fig. 10. Gate Charge 50 10 45 9 40 8 35 7 VGS - Volts IS - Amperes 8 ID - Amperes 30 25 20 VDS = 600V I D = 8A I G = 10mA 6 5 4 TJ = 125ºC 3 15 TJ = 25ºC 10 2 1 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 VSD - Volts 60 80 100 120 QG - NanoCoulombs Fig. 12. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 11. Capacitance 1.2 100,000 BVDSS & VGS(th) - Normalized Capacitance - PicoFarads f = 1 MHz Ciss 10,000 1,000 Coss 100 1.1 BVDSS 1 0.9 VGS(th) 0.8 Crss 10 0.7 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXFR16N120P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_16N120P(85)9-12-12-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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