IXFR180N07

IXFR180N07 HiperFETTM Power MOSFET VDSS ID25 D RDS(on) trr (Electrically Isolated Tab) = = ≤ ≤ 70V 180A Ω 6mΩ 250ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 70 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C (Chip Capability) 180 A IL(RMS) External Lead Current Limit 160 A IDM TC = 25°C, Pulse Width Limited by TJM 720 A IA EAS TC = 25°C TC = 25°C 180 3 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 417 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V∼ 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 70 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) z V 4.0 V ±200 nA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved 25 μA 500 μA 6 mΩ High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS98585B(10/12) IXFR180N07 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 48 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs 80 S 11080 pF 4540 pF 2500 pF 0.74 Ω 37 ns 160 ns 90 ns 60 ns 395 nC RG = 1Ω (External) Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd ISOPLUS247 (IXFR) Outline 42 nC 203 nC 1 = Gate 2,4 = Drain 3 = Source 0.30 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 720 A VSD IF = 100, VGS = 0V, Note 1 1.3 V trr QRM IRM Note IF = 50A, -di/dt = 100A/μs 1.2 10 VR = 50V, VGS = 0V 250 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR180N07 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 180 350 VGS = 15V VGS = 15V 10V 9V 8V 160 140 10V 9V 8V 300 250 7V ID - Amperes ID - Amperes 120 100 6V 80 7V 200 150 60 6V 100 40 5V 50 20 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 3 4 5 6 7 VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. RDS(on) Normalized to ID = 90A Value vs. Junction Temperature 180 8 1.8 VGS = 15V 10V 9V 8V 140 VGS = 10V 1.6 7V R DS(on) - Normalized 160 ID - Amperes 1 VDS - Volts 120 6V 100 80 60 5V ID = 180A 1.4 ID = 90A 1.2 1.0 40 0.8 20 4V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.6 1.8 2 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 90A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Drain Current vs. Case Temperature 180 2.2 VGS = 10V 15V 2.0 160 External Lead Current Limit 140 1.8 120 1.6 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade TJ = 150ºC 1.4 1.2 100 80 60 1.0 40 TJ = 25ºC 0.8 20 0 0.6 0 50 100 150 200 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR180N07 Fig. 7. Input Admittance Fig. 8. Transconductance 200 140 TJ = - 40ºC 180 120 160 100 g f s - Siemens ID - Amperes 140 120 100 TJ = 150ºC 25ºC - 40ºC 80 25ºC 80 150ºC 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 VGS - Volts 100 120 140 160 180 200 220 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 320 VDS = 35V 9 280 I D = 90A 8 I G = 10mA 240 200 160 VGS - Volts IS - Amperes 7 TJ = 150ºC 120 TJ = 25ºC 6 5 4 3 80 2 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 250 300 350 400 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100 0.1 Z(th)JC - ºC / W Capacitance - NanoFarads f = 1 MHz Ciss 10 Coss 0.01 0.001 Crss 1 0 5 10 15 20 25 30 35 40 0.0001 0.00001 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXFR180N07 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 1,000 1,000 RDS(on) Limit RDS(on) Limit 250µs 250µs 1ms 100 External Lead Limit 10ms 100ms 10 1ms ID - Am peres ID - Am peres 100 10ms 10 DC TJ = 150ºC 100ms TJ = 150ºC DC TC = 75ºC Single Pulse TC = 25ºC Single Pulse 1 1 1 10 VDS - Volts © 2012 IXYS CORPORATION, All Rights Reserved 100 1 10 100 VDS - Volts IXYS REF: F_180N07(9X-C53) 10-29-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.