IXFR180N085

HiPerFETTM Power MOSFETs IXFR 180N085 ISOPLUS247TM (Electrically Isolated Back Surface) VDSS = 85 V ID25 = 180 A RDS(on) = 7 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM ISOPLUS 247TM E153432 85 85 V V Continuous Transient ±20 ±30 V V ID25 ID(RMS) IDM IAR TC = 25°C (MOSFET chip capability) External lead current limit TC = 25°C, Note 1 TC = 25°C 180 76 720 180 A A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 400 W Features TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C 2500 V~ 5 g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(