IXFR180N10

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 V A 8 mW (Electrically Isolated Back Surface) RDS(on) = Single MOSFET Die trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID(RMS) IDM IAR TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C 165 76 720 180 A A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 100 V VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 90A Note 1 ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features TJ TJM Tstg TL ISOPLUS 247TM 100 mA 2 mA 8 mW • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(