IXFR180N15P

PolarHVTM HiPerFET Power MOSFET IXFR 180N15P VDSS ID25 RDS(on) trr ISOPLUS247TM (Electrically Isolated Back Surface) = = ≤ ≤ 150 V 100 A Ω 13 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 150 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 150 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25° C 100 A ID(RMS) External Lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 380 A IAR TC = 25° C 60 A EAR TC = 25° C 100 mJ EAS TC = 25° C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute Fd Mounting force W -55 ... +175 175 -55 ... +150 °C °C °C l V~ l 20..120 / 4.5..26 N/lb l 5 g VGS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS, VGS = 0 V RDS(on) VGS = 10 V, ID = IT , Note 1 TJ = 150° C l 2500 Characteristic Values Min. Typ. Max. V 5.0 V ±100 nA 25 1.5 µA mA 13 mΩ S ISOLATED TAB D = Drain Features °C VDSS © 2006 IXYS All rights reserved 300 D G = Gate S = Source 300 Weight Symbol Test Conditions (TJ = 25° C, unless otherwise specified) G l TC = 25° C TL ISOPLUS247 (IXFR) E153432 l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages l l l Easy to mount Space savings High power density DS99242(01/06) IXFR 180N15P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 86 S 7000 pF 2250 pF Crss 515 pF td(on) 30 ns gfs VDS = 10 V; ID = IT, Notes 1, 2 55 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60A td(off) RG = 3.3 Ω (External) 32 ns 150 ns 36 ns 240 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd 55 nC 140 nC ISOPLUS247 Outline 0.5 ° C/W RthJC ° C/W 0.15 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive 380 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM VR = 100V, VGS = 0V 0.6 µC 6 A IRM Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. Test current IT = 90 A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFR 180N15P Fig. 1. Output Char acte r is tics @ 25 ºC Fig. 2. Exte nde d Output Char acte r is tics @ 25 ºC 180 320 V GS = 10V 160 140 9V 240 120 8V I D - Amperes I D - Amperes V GS = 10V 280 9V 100 80 7V 60 200 8V 160 120 7V 80 40 6 20 40 0 0 0.4 0.8 1.2 1.6 6V 0 2 0 V D S - V olts Fig. 3. Output Char acte ris tics @ 150 ºC 180 2.6 4 5 6 V D S - V olts 7 8 9 10 V GS = 10V 2.4 R D S ( o n ) - Normalized I D - Amperes 3 2.8 140 8 120 100 80 7V 60 6V 40 20 2.2 2 I D = 180A 1.8 1.6 I D = 90A 1.4 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 V D S - V olts -25 0 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to ID = 90A V alue vs . Dr ain Curr e nt Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r atur e 3.4 90 3.1 2.8 70 2.5 2.2 V GS = 10V 1.9 V GS = 15V 1.6 TJ = 25 ºC 1.3 Ex ternal Lead C urrent Lim it 80 TJ = 175 ºC I D - Amperes R D S ( o n ) - Normalized 2 Fig. 4. RDS(on ) Nor m alize d to ID = 90A V alue vs . Junction Te m pe ratur e V GS = 10V 9V 160 1 60 50 40 30 20 1 10 0.7 0 0 50 100 150 200 I D - A mperes © 2006 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade IXFR 180N15P Fig. 8. Tr ans conductance Fig. 7. Input Adm ittance 120 250 TJ = -40 ºC 225 100 200 80 - Siemens 150 125 fs 100 60 TJ = 150 ºC 75 40 g I D - Amperes 175 25 ºC 50 20 -40 ºC 25 25 ºC 150 ºC 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 25 50 75 100 125 150 175 200 225 250 V G S - V olts I D - A mperes Fig. 9. Sour ce Cur r e nt vs . Sour ce -To-Dr ain V oltage Fig. 10. Gate Char ge 10 350 300 V DS = 75V 8 I D = 90A I G = 10m A 7 V G S - Volts I S - Amperes 250 9 200 150 TJ = 150 ºC 100 6 5 4 3 2 TJ = 25 ºC 50 1 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 V S D - V olts 50 75 Q 100 125 150 175 200 225 250 G - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 1000 100,000 f = 1M Hz R DS (on) Lim it Cis 10,000 I D - Amperes Capacitance - picoFarads 25 Cos 1,000 25µs 100µs 100 1m s 10m s 10 Crs DC TJ = 175 ºC TC = 25 ºC 100 1 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - V olts 1000 IXFR 180N15P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width -Seconds © 2006 IXYS All rights reserved IXYS REF: T_180N15P (88) 03-23-06-C.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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