IXFR18N90P

IXFR18N90P PolarTMHiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 10.5 A IDM TC = 25°C, Pulse Width Limited by TJM 36 A IA EAS TC = 25°C TC = 25°C 9 800 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g G D Isolated Tab S G = Gate S = Source D = Drain Fearures z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages z z z Weight 900V 10.5A Ω 660mΩ 300ns ISOPLUS247TM E153432 Symbol TJ = = ≤ ≤ High Power Density Easy to Mount Space Savings Applications z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 9A, Note 1 V z z z z TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved 6.5 V ± 100 nA DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies Leaser Drivers DC Choppers AC and DC Motor Drives 25 μA 1.5 mA 660 mΩ DS100058A(03/11) IXFR18N90P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 9A, Note 1 6 RGi Gate input resistance Ciss Coss 10 S 1.2 Ω 5230 pF 366 pF 53 pF 40 ns 33 ns 60 ns 44 ns 97 nC 30 nC 40 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 9A RG = 2Ω (External) Qg(on) Qgs ISOPLUS247TM Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 9A Qgd 0.62 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 18 A ISM Repetitive, pulse width limited by TJM 72 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 300 ns IF = 9A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1.0 μC 10.8 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Rhange Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR18N90P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 18 40 VGS = 10V 9V 8V 16 32 14 28 ID - Amperes 12 ID - Amperes VGS = 10V 9V 36 7V 10 8 6 8V 24 20 16 7V 12 6V 4 8 6V 2 4 5V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 18 3.0 VGS = 10V 9V 8V 16 VGS = 10V 2.6 R DS(on) - Normalized ID - Amperes 14 7V 12 10 8 6V 6 I D = 18A 2.2 1.8 I D = 9A 1.4 1.0 4 0.6 5V 2 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 24 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.0 12 VGS = 10V 10 TJ = 125ºC 2.2 8 ID - Amperes R DS(on) - Normalized 2.6 1.8 1.4 6 4 TJ = 25ºC 1.0 2 0.6 0 0 4 8 12 16 20 24 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 28 32 36 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR18N90P Fig. 7. Input Admittance Fig. 8. Transconductance 32 18 28 16 TJ = - 40ºC 14 20 TJ = 125ºC 25ºC - 40ºC 16 12 25ºC 12 g f s - Siemens ID - Amperes 24 125ºC 10 8 6 8 4 4 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 4 8 12 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 20 24 28 32 Fig. 10. Gate Charge 10 60 VDS = 450V 9 50 I D = 9A 8 I G = 10mA 7 VGS - Volts 40 IS - Amperes 16 ID - Amperes 30 20 TJ = 125ºC 6 5 4 3 2 TJ = 25ºC 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 10 20 VSD - Volts 30 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 0.1 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Rhange Limits, Test Conditions, and Dimensions. IXYS REF: F_18N90P(76)10-22-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.