IXFR200N10P

IXFR200N10P PolarTM HiPERFET Power MOSFET VDSS ID25 = 100V = 120A  < 9m RDS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 120 400 A A IA EAS TC = 25C TC = 25C 60 4 A J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 300 W -55...+175  C TJM 175  C Tstg -55...+175  C TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb 5 g G Isolated Tab S G = Gate S = Source D = Drain Features    Weight D   Silicon chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 VGS = 15V, ID = 400A, Note 1 V Applications 5.0 V 100 nA • DC-DC Coverters • Battery Chargers • Switch-Mode and Resonant-Mode Power Supplies • DC Choppers • AC and DC Motor Drives • Uninterrupted Power Supplies • High Speed Power Switching Applications 25  A 500 A TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 6 9 m m DS99238F(02/17) IXFR200N10P Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 60 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 60A RG = 3.3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 100A Qgd 97 S 7600 pF 2900 pF 860 pF 30 ns 35 ns 150 ns 90 ns 235 nC 50 nC 135 nC RthJC ISOPLUS247 (IXTR) Outline 1 - Gate 2,4 - Drain 3 - Source 0.50 C/W RthCS 0.15      C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 A ISM Repetitive, pulse width limited by TJM 400 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 25A, -di/dt = 100A/s, VR = 50V, VGS = 0V Note: 6.0 0.4 150 ns A μC 1. Pulse test, t  300s; duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR200N10P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 200 350 VGS = 10V 180 VGS = 10V 9V 300 160 250 I D - Amperes I D - Amperes 9V 8V 140 120 100 80 7V 60 200 8V 150 100 7V 40 6V 50 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 0.5 1 1.5 2.5 3 3.5 4 4.5 VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature 2.4 VGS = 10V 9V 180 2.0 R DS(on) - Normalized 8V 140 120 100 5 VGS = 10V 2.2 160 7V 80 60 I D = 200A 1.8 I D = 100A 1.6 1.4 1.2 1.0 40 6V 0.8 20 0 5V 0 1 1 2 2 3 0.6 3 4 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 140 2.4 2.2 120 TJ = 150ºC 2.0 100 1.8 I D - Amperes RDS(on) - Normalized 2 VDS - Volts 200 I D - Amperes 6V 0 0 1.6 VGS = 10V 1.4 VGS = 15V 80 60 1.2 40 TJ = 25ºC 1.0 20 0.8 0.6 0 0 50 100 150 200 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFR200N10P Fig. 7. Input Admittance Fig. 8. Transconductance 300 140 TJ = - 40ºC 120 250 100 g f s - Siemens I D - Amperes 200 150 100 TJ = 125ºC 25ºC 25ºC 80 125ºC 60 40 50 20 - 40ºC 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 50 100 150 VGS - Volts 200 250 300 350 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 350 VDS = 50V 9 300 I D = 100A 8 TJ = 25ºC 250 I G = 10mA 7 V GS - Volts I S - Amperes TJ = 125ºC 200 150 6 5 4 3 100 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 40 VSD - Volts 120 160 200 240 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz RDS(on) Limit 100µs Ciss 10,000 100 I D - Amperes Capacitance - PicoFarads 80 Coss 1,000 1ms 10 10ms DC TJ = 175ºC Crss TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFR200N10P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_200N10P (88) 2-08-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.