IXFR20N120P

PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 50 A IA TC = 25°C 10 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 290 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight Isolated Tab G = Gate S = Source Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 10A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 6.5 V ± 200 nA 25 μA 5 mA D = Drain Features • Silicon chip on Direct-Copper-Bond • • • • • substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(