IXFR21N100Q

IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V TC = 25°C TC = 25°C, Note 1 TC = 25°C 18 84 21 A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD TC = 25°C 350 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS = 1000 V = 18 A = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Symbol VDSS ID25 RDS(on) t = 1 min ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source * Patent pending Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive -faster switching z Low drain to tab capacitance(