IXFR24N100

IXFR24N100 HiPerFETTM Power MOSFET ISOPLUS247TM VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = = ≤ ≤ 1000V 22A Ω 390mΩ 250ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 22 A IDM TC = 25°C, pulse width limited by TJM 96 A IA TC = 25°C 24 A EAS TC = 25°C 3 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 416 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 20..120 / 4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting force t = 1min t = 1s Weight Isolated Tab G = Gate S = Source D = Drain Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(