IXFR24N90P

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR24N90P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 48 A IA EAS TC = 25°C TC = 25°C 12 1 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 230 W Fearures -55 ... +150 °C z TJM 150 °C Tstg -55 ... +150 °C TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Isolated Tab G = Gate S = Source z z z z z D = Drain Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Fast intrinsic diode Avalanche rated Low package inductance Advantages z Weight 900V 13A Ω 460mΩ 300ns ISOPLUS247 E153432 Symbol TJ = = ≤ ≤ z Low gate drive requirement High power density Applications: Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 12A, Note 1 V 6.5 V ± 200 nA z z z z z TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 25 μA 2 mA 460 mΩ DS100060(10/08) IXFR24N90P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 12A, Note 1 10 RGi Gate input resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 12A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 12A Qgd ISOPLUS247 (IXFR) Outline 16 S 1.1 Ω 7200 pF 490 pF 60 pF 46 ns 40 ns 68 ns 38 ns 130 nC 50 nC 58 nC 0.54 °C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 24 A ISM Repetitive, pulse width limited by TJM 96 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM 300 ns IF = 12A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1.1 μC 11 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR24N90P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 24 50 VGS = 10V 9V 22 VGS = 10V 9V 45 20 40 35 16 ID - Amperes ID - Amperes 18 8V 14 12 10 8 8V 25 20 15 7V 6 30 10 4 7V 5 6V 2 0 6V 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 VDS - Volts 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 24 3.2 VGS = 10V 9V 22 3.0 VGS = 10V 2.8 20 2.6 16 RDS(on) - Normalized 18 ID - Amperes 12 VDS - Volts 8V 14 12 7V 10 8 6 4 6V 2 5V 2.4 2.2 I D = 24A 2.0 I D = 12A 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 14 2.8 VGS = 10V 2.6 TJ = 125ºC 12 10 2.2 ID - Amperes RDS(on) - Normalized 2.4 2.0 1.8 1.6 1.4 8 6 4 1.2 TJ = 25ºC 2 1.0 0.8 0 0 4 8 12 16 20 24 28 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 32 36 40 44 48 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR24N90P Fig. 7. Input Admittance Fig. 8. Transconductance 30 30 TJ = - 40ºC 25 25 ID - Amperes g f s - Siemens TJ = 125ºC 25ºC - 40ºC 20 15 10 25ºC 20 125ºC 15 10 5 5 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 VGS - Volts ID - Amperes Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 30 TJ = 125ºC 20 VDS = 450V I D = 12A I G = 10mA 8 6 4 TJ = 25ºC 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 VSD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1MHz Coss 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_24N90P(85)10-23-08 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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