IXFR26N100P

PolarTM Power MOSFET HiPerFETTM IXFR26N100P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM 65 A IAR EAS TC = 25°C TC = 25°C 13 1 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 290 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C = 1000V = 15A ≤ 430mΩ Ω ≤ 300ns Maximum Ratings TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate D S = Source = Drain Features • Silicon chip on Direct-Copper-Bond • • • • substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(