IXFR26N120P

IXFR26N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = =   1200V 15A  550m 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 15 A IDM TC = 25C, Pulse Width Limited by TJM 60 A IA EAS TC = 25C TC = 25C 13 1.5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 15 V/ns PD TC = 25C 320 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V G N/lb 5 g Weight Isolated Tab S G = Gate S = Source D = Drain Features        20..120/4.5..27 D  Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation International Standard Package Fast Recovery Rectifier Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 13A, Note 1 Characteristic Values Min. Typ. Max. 1200 3.5 Applications V 6.5 © 2014 IXYS CORPORATION, All Rights Reserved  V 200 nA TJ = 125C Easy to Mount Space Savings High Power Density   50 A 5 mA 550 m   High Voltage Switch-mode and Resonant-Mode Power Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC Converters High Voltage DC-AC Inverters DS99886B(02/14) IXFR26N120P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = 20V, ID = 13A, Note 1 21 S 14 nF 725 pF 50 pF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 1.5 Qgs   56 ns 55 ns 76 ns 58 ns 225 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 13A RG = 1 (External) Qg(on) ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 13A Qgd 87 nC 98 nC RthJC A1 b b1 b2 c E 1 = Gate 2,4 = Drain 3 = Source 0.39C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 26 A Repetitive, Pulse Width Limited by TJM 104 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 13A, -di/dt = 100A/s 1.3 12.0 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR26N120P Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 50 VGS = 10V VGS = 10V 9V 24 45 40 20 9V I D - Amperes I D - Amperes 35 16 8V 12 30 25 20 8V 8 15 10 4 7V 5 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.0 VGS = 10V 9V 24 VGS = 10V 2.6 RDS(on) - Normalized 20 I D - Amperes 8V 16 12 7V 8 I D = 26A 2.2 1.8 I D = 13A 1.4 1.0 4 0.6 6V 0 0.2 0 5 10 15 20 25 -50 25 50 75 100 Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature VGS = 10V 150 14 TJ = 125ºC 2.0 12 1.8 10 1.6 1.4 TJ = 25ºC 1.2 125 16 I D - Amperes RDS(on) - Normalized 0 TJ - Degrees Centigrade 2.4 2.2 -25 VDS - Volts 8 6 4 2 1.0 0.8 0 0 5 10 15 20 25 30 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 35 40 45 50 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR26N120P Fig. 8. Transconductance Fig. 7. Input Admittance 40 30 TJ = - 40ºC 35 25 30 g f s - Siemens I D - Amperes 20 15 TJ = 125ºC 25º - 40ºC 10 25ºC 25 125ºC 20 15 10 5 5 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 5 10 15 VGS - Volts 20 25 30 35 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts I S - Amperes VDS = 600V 40 30 I D = 13A I G = 10mA 8 6 TJ = 125ºC 20 4 TJ = 25ºC 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 80 VSD - Volts 120 160 200 240 280 320 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100000 1 10000 Ciss 0.1 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1000 Coss 0.01 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_26N120P (96) 10-24-11-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.