IXFR32N100P

PolarTM Power MOSFET HiPerFETTM IXFR32N100P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Maximum Ratings = 1000V = 18A ≤ 340mΩ Ω ≤ 300ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 18 A IDM TC = 25°C, pulse width limited by TJM 75 A IAR TC = 25°C 16 A EAS TC = 25°C 1.5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 320 W -55 ... +150 °C Features TJM 150 °C • Silicon chip on Direct-Copper-Bond Tstg -55 ... +150 °C TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source • • • • • D = Drain substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(