IXFR32N80P

PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 32N80P VDSS = ID25 = RDS(on) ≤ ≤ trr (Electrically Isolated Back Surface) 800 V 20 A 290 m Ω 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 800 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 20 A IDM TC = 25° C, pulse width limited by TJM 70 A IAR TC = 25° C 16 A EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 300 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s FC Mounting force VISOL 50/60 Hz, RMS 20..120/4.5..26 N/lb 2500 V~ 5 g t = 1 minute Weight Symbol Test Conditions (TJ = 25° C, unless otherwise specified) °C 300 Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V 25 1000 µA µA RDS(on) VGS = 10 V, ID = IT Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 290 mΩ © 2006 IXYS All rights reserved TJ = 125° C V 5.0 V ISOPLUS247 (IXFR) E153432 (Isolated Tab) G = Gate S = Source D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(