IXFR34N80

IXFR34N80 HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   800V 28A  265m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C, RGS = 1M 800 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 28 A IDM TC = 25C, Pulse Width Limited by TJM 136 A IA EAS TC = 25C TC = 25C 34 3 A J dv/dt IS 5 V/ns PD TC = 25C 416 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C  2500 V   IDM, VDD  VDSS, TJ  150C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 20..120/4.5..27 N/lb 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features        Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 17A, Note 1 Applications V 5.0 V    100 nA TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 100 A 2 mA   DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives 265 m DS98674B(9/15) IXFR34N80 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 20 VDS = 10V, ID = 17A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf RG = 1 (External) Qg(on) Qgs 35 S 7500 pF 920 pF 220 pF 45 ns 45 ns 100 ns 40 ns 270 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 17A VGS = 10V, VDS = 0.5 • VDSS, ID = 17A Qgd ISOPLUS247 (IXFR) Outline 60 nC 140 nC RthJC 0.30C/W RthCS 0.15C/W 1 = Gate 2,4 = Drain 3 = Source Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 17A, VGS = 0V, Note 1 trr QRM IRM Note IF = 17AA, -di/dt = 100A/s 1.4 VR = 100V, VGS = 0V 10 34 A 136 A 1.5 V 250 ns  μC A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2