IXFR36N60P

PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 20 A IDM TC = 25° C, pulse width limited by TJM 80 A IAR TC = 25° C 36 A EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD TJ TJM Tstg TL TSOLD VISOL FC Weight Maximum Ratings TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, 1 minute Mounting force °C -55 ... +150 150 -55 ... +150 300 260 2500 °C °C °C °C °C V~ N/lb g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT (note 1) Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved 208 20..120/4.6..27 5 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) TJ = 125° C = = ≤ ≤ V 5.0 V ±100 nA 25 250 µA µA 200 mΩ 600 20 200 200 V A Ω mΩ ns ISOPLUS247 (IXFR) E153432 G D Isolated Tab S G = Gate S = Source D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l International standard package l Fast recovery diode l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99395E(03/06) IXFR 36N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT, pulse test 25 Ciss Coss 40 S 5800 pF 570 pF 30 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 25 ns td(off) RG =2 Ω (External) 80 ns 22 ns 102 nC 34 nC 36 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd RthJC 0.6 °C/W °C/W 0.15 RthCS ISOPLUS247 (IXFR) Outline Note 1: Test current IT = 18 A Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 36 A ISM Repetitive 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V, VGS = 0 V 0.8 6.0 µC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFR 36N60P Fig. 2. Exte nde d Output Characte r is tics Fig. 1. Output Characte r is tics @ 25º C @ 25º C 36 90 V GS = 10V 28 70 24 60 6V 20 V GS = 10V 80 7V I D - Amperes I D - Amperes 32 16 12 8 8V 7V 50 40 6V 30 20 4 10 5V 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 V D S - V olts Fig. 3. Output Characte r is tics @ 125ºC 18 21 24 27 30 3.1 V GS = 10V 32 V GS = 10V 2.8 7V R D S ( o n ) - Normalized 28 I D - Amperes 15 V D S - V olts Fig. 4. RDS(on ) Norm alize d to ID = 18A V alue vs . Junction Te m pe r atur e 36 6V 24 20 16 12 5V 8 4 2.5 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 V D S - V olts 14 16 -50 22 25 50 75 100 125 150 20 V GS = 10V 3.0 0 Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e ID = 18A V alue vs . ID 3.4 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to 18 TJ = 125ºC 16 2.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 1.4 14 12 10 8 6 TJ = 25ºC 4 1.0 2 0 0.6 0 10 20 30 40 50 I D - A mperes © 2006 IXYS All rights reserved 60 70 80 90 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFR 36N60P Fig. 8. Transconductance Fig. 7. Input Adm ittance 55 70 50 45 g f s - Siemens I D - Amperes 40 35 30 25 20 TJ = 125ºC 15 25ºC -40ºC 10 60 TJ = -40ºC 50 25ºC 125ºC 40 30 20 10 5 0 0 3.5 4 4.5 5 5.5 6 6.5 0 10 20 V G S - Volts 100 10 90 9 VDS = 300V 80 8 I D = 18A 70 7 I G = 10mA 60 50 40 50 60 70 6 5 4 3 TJ = 125ºC 2 20 TJ = 25ºC 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 0 1.2 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig . 12. M axim u m T r an s ie n t T h e r m al Re s is tan ce Fig. 11. Capacitance 10000 1.00 C iss R ( t h ) J C - ºC / W Capacitance - picoFarads 40 Fig. 10. Gate Charge VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 30 30 I D - Amperes 1000 C oss 100 f = 1MHz 0.10 C rss 10 0.01 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Puls e Width - millis ec onds 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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