IXFR40N90P

IXFR40N90P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = = < < RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 900V 21A Ω 250mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 21 A IDM TC = 25°C, Pulse Width Limited by TJM 80 A IA TC = 25°C 20 A EAS TC = 25°C 2.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 300 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C z 300 260 °C °C z 2500 V~ z 20..120/4.5..27 N/lb. 5 g TJ TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force G Isolated Tab S G = Gate S = Source D = Drain Features z z Weight D z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages High Power Density Easy to Mount z Space Savings z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 20A, Note 1 z V Applications 6.5 V ±200 nA z 50 μA 3.5 mA z 250 mΩ z z z © 2011 IXYS CORPORATION, All Rights Reserved Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100063A(10/11) IXFR40N90P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 20V, ID = 20A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 20A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 20A Qgd ISOPLUS247 (IXFR) Outline 30 S 14 nF 896 pF 58 pF 1.5 Ω 53 ns 50 ns 77 ns 46 ns 230 nC 70 nC 100 nC 1 = Gate 2,4 = Drain 3 = Source 0.42 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 20A, -di/dt = 100A/μs, VR = 100V, VGS = 0V Note: 14.0 1.7 40 A 160 A 1.5 V 300 ns A μC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR40N90P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 40 90 VGS = 10V 9V 35 70 30 ID - Amperes 8V ID - Amperes VGS = 10V 9V 80 25 20 15 60 50 8V 40 30 7V 10 20 7V 5 10 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 20A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.2 40 VGS = 10V 8V 35 R DS(on) - Normalized 25 7V 20 VGS = 10V 2.8 30 ID - Amperes 20 VDS - Volts 15 2.4 I D = 40A 2.0 I D = 20A 1.6 1.2 10 0.8 5 6V 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 Fig. 5. RDS(on) Normalized to ID = 20A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 24 2.8 2.6 VGS = 10V TJ = 125ºC 20 2.4 2.2 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.0 1.8 1.6 12 8 TJ = 25ºC 1.4 16 1.2 4 1.0 0.8 0 0 10 20 30 40 50 60 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR40N90P Fig. 8. Transconductance 50 50 40 40 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 30 TJ = 125ºC 25ºC - 40ºC 20 TJ = - 40ºC 25ºC 125ºC 30 20 10 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 5 10 15 VGS - Volts 25 30 35 40 45 50 55 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 120 14 VDS = 450V 12 I G = 10mA I D = 20A 100 80 VGS - Volts IS - Amperes 20 60 10 8 6 40 TJ = 125ºC 4 TJ = 25ºC 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 50 100 VSD - Volts 150 200 250 300 350 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 10,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_40N90P(96) 10-25-11-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.