IXFR44N50P

PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS(on) ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGSM VGSM Transient Continuous ±40 ±30 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 24 132 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 44 55 1.7 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω 10 V/ns PD TC = 25° C 208 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 20..120 / 4.5..25 N/lb 5 g 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute FC Mounting Force G Weight D S G = Gate S = Source ISOLATED TAB D = Drain Features l TJ TJM Tstg TL ISOPLUS247 (IXFR) E153432 l l l l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. l l BVDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 22 A © 2006 IXYS All rights reserved TJ = 125° C V 5.0 V ±100 nA 25 500 µA µA 150 l Easy to mount Space savings High power density mΩ DS99319E(03/06) IXFR 44N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 22 A, Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 32 S 5440 pF 639 pF 40 pF Crss td(on) 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 22 A 27 ns td(off) RG = 3 Ω (External) 70 ns tf 18 ns Qg(on) 98 nC 35 nC 30 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 22 A Qgd ISOPLUS247 Outline 0.6 ° C/W RthJC ° C/W 0.15 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 30 A ISM Repetitive 132 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 22 A, QRM IRM -di/dt = 100 A/µs VR = 100V 200 ns 0.6 6.0 µC A 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Notes: 1. Pulse test, t ≤300 ms, duty cycle d ≤2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405B2 6,759,692 6,583,505 6,710,463 6,771,478 B2 IXFR 44N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 45 100 V GS = 10V 7V 40 80 35 70 30 25 I D - Amperes I D - Amperes V GS = 10V 8V 90 6V 20 15 7V 60 50 40 6V 30 10 20 5V 5 10 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 4. R DS(on) Normalized to ID = 22A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 45 3.2 V GS = 10V 7V 40 V GS = 10V 2.8 R DS(on) - Normalized I D - Amperes 35 6V 30 25 20 15 5V 2.4 2 I D = 44A I D = 22A 1.6 1.2 10 0.8 5 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 V DS - Volts 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 6. Drain Current vs. Case Fig. 5. R DS(on) Normalized to ID = 22A Value v s. Drain Current Fig. 6. Maximum Drain Current vs. Tem perature Case Temperature 50 3.2 27 3.0 45 V GS = 10V 24 2.8 40 TJ = 125ºC 21 2.4 18 2.2 2.0 1.8 1.6 I D - Amperes 2.6 I D - Amperes R DS(on) - Normalized 0 15 12 9 1.4 6 TJ = 25ºC 1.2 3 1.0 0.8 0 0 10 20 30 40 50 I D - Amperes © 2006 IXYS All rights reserved 60 70 80 90 100 35 30 25 20 15 10 5 -50 0 -25 -50 0 25 50 75 -25 T - Degrees 0 25 Centigrade 50 75 C 100 125 100 TC - Degrees Centigrade 150 125 150 IXFR 44N50P Fig. 8. Transconductance Fig. 7. Input Admittance 65 60 60 55 55 50 50 45 g f s - Siemens I D - Amperes 45 40 35 30 TJ = 125ºC 25ºC - 40ºC 25 20 35 30 25 20 15 15 10 10 5 5 0 TJ = - 40ºC 25ºC 125ºC 40 0 3.5 4 4.5 5 5.5 6 6.5 0 10 20 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 50 60 70 Fig. 10. Gate Charge 10 140 V DS = 250V 9 120 I D = 22A 8 100 I G = 10mA 7 V GS - Volts I S - Amperes 30 I D - Amperes 80 TJ = 125ºC 60 TJ = 25ºC 40 6 5 4 3 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 V SD - Volts 30 40 50 60 70 80 90 100 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1,000 TJ = 150ºC Capacitance - PicoFarads C iss TC = 25ºC RDS(on) Limit I D - Amperes 1,000 C oss 100 100 25µs 100µs 10 10ms C rss f = 1 MHz DC 10 0 5 1ms 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V DS - Volts 1000 IXFR 44N50P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds © 2006 IXYS All rights reserved IXYS REF: T_44N50P (8J) 03-21-06-B.XLS Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.