IXFR44N60

HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS(on) = 130 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 38 60 44 A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS G = Gate S = Source D = Drain * Patent pending Features TJ TJM Tstg TL ISOPLUS 247TM E153432 t = 1 min Weight • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(