IXFR44N80P

PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS(on) Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 25 100 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 25 80 3.4 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns PD Maximum Ratings ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source Features z TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V~ 20..120 /4.5..25 N/lb 5 g TJ TJM Tstg z z TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds VISOL 50/60 Hz, RMS, 1 minute FC Mounting force z z z Weight z Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 800 μA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ± 30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT, Note 1 TJ = 125°C V 5.0 V ± 200 nA 50 1.5 μA mA 200 mΩ Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(