IXFR48N60P

PolarHVTM HiPerFET Power MOSFET IXFR 48N60P VDSS ID25 RDS(on) trr ISOPLUS247TM (Electrically Isolated Back Surface) = 600 V = 32 A ≤ 150 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 32 A IDM TC = 25° C, pulse width limited by TJM 110 A IAR TC = 25° C 32 A EAR TC = 25° C 70 mJ EAS TC = 25° C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 20 V/ns PD TC = 25° C 300 W -55 ... +150 150 -55 ... +150 300 °C °C °C °C 2500 V~ 20..120 / 4.5..26 N/lb. 5 g TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute FC Mounting Force Weight ISOPLUS247 (IXFR) E153432 G BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT © 2006 IXYS All rights reserved V 5.0 V ±200 nA l l l l 25 1000 µA µA 150 mΩ D = Drain International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages l l l TJ = 125° C ISOLATED TAB Features l Characteristic Values Min. Typ. Max. S G = Gate S = Source l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) D Easy to mount Space savings High power density DS99184E(12/05) IXFR48N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = IT, Notes 1, 2 35 53 S 8860 pF 850 pF Crss 60 pF td(on) 30 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VDS = 0.5 VDSS, ID = IT, VGS = 10 V 25 ns td(off) RG = 2 Ω (External) 85 ns 22 ns 150 nC 50 nC 50 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Qgd RthJC 0.42 Source-Drain Diode °C/W °C/W 0.15 RthCS ISOPLUS247 Outline Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 32 A ISM Repetitive 110 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 20A, -di/dt = 100 A/µs 200 ns QRM VR = 480V IRM 0.8 µC 6.0 A Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. Test current IT = 24 A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFR 48N60P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Characte r is tics @ 25º C @ 25º C 50 V GS = 10V 45 40 V GS = 10V 120 8V 7V 8V 100 I D - Amperes I D - Amperes 35 30 25 6V 20 15 7V 80 60 40 6V 10 20 5 5V 5V 0 0 0 1 2 3 4 5 0 6 4 8 Fig. 3. Output Characte r is tics @ 125ºC 20 24 3.1 V GS = 10V 45 R D S ( o n ) - Normalized 35 6V 30 25 20 15 10 V GS = 10V 2.8 7V 40 I D - Amperes 16 Fig. 4. RDS(on ) Norm alize d to ID = 24A V alue vs . Junction Te m pe r atur e 50 5V 2.5 2.2 I D = 48A 1.9 1.6 I D = 24A 1.3 1 0.7 5 0.4 0 0 2 4 6 8 V D S - V olts 10 12 -50 14 50 75 100 125 150 30 TJ = 125ºC 2.8 25 35 V GS = 10V 3.1 0 Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e ID = 24A V alue vs . Dr ain Cur re nt 3.4 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 25 2.5 I D - Amperes R D S ( o n ) - Normalized 12 V D S - V olts V D S - V olts 2.2 1.9 1.6 20 15 10 1.3 TJ = 25ºC 5 1 0 0.7 0 20 40 60 80 I D - A mperes © 2006 IXYS All rights reserved 100 120 140 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFR48N60P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 100 80 90 70 80 - Siemens TJ = 125ºC 25ºC -40ºC 40 70 60 50 fs 50 40 g I D - Amperes 60 30 30 20 TJ = -40ºC 25ºC 125ºC 20 10 10 0 0 4 4.5 5 5.5 6 6.5 7 0 10 20 30 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 50 60 70 80 90 140 160 Fig. 10. Gate Char ge 10 160 140 120 100 V G S - Volts I S - Amperes 40 I D - A mperes 80 60 V DS = 300V 8 I D = 24A 7 I G = 10m A 6 5 4 3 TJ = 125ºC 40 9 2 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 V S D - V olts 1.1 1.2 0 1.3 20 40 60 Q G 80 100 120 - nanoCoulombs Fig . 13 . M a x im u m T r a n s ie n t T h e r m al Re s is t a n ce Fig. 11. Capacitance 100000 1.00 C is s 10000 R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z C os s 1000 100 0.10 0.01 C rs s 10 0.00 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 0.0001 0.001 0.01 0.1 Pu ls e W id th - Se c o n ds 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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