IXFR4N100Q

HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q (Electrically Isolated Backside) VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 1000 1000 V V ±20 ±30 V V 3.5 16 4 A A A 20 700 mJ mJ 5 V/ns 80 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C 2500 V~ TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight 5 g ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source D = Drain * Patent pending Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(