IXFR58N20

HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 50 232 58 A A A EAR EAS TC = 25°C TC = 25°C 30 1.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 300 W -55 ... +150 150 -55 ... +150 °C °C °C 250 °C 2500 V~ 5 g TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS ISOPLUS 247TM E153432 G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features t = 1 min Weight z z z z z z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(