IXFR64N60P

IXFR64N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 36A  105m 200ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 36 A IDM TC = 25C, Pulse Width Limited by TJM 150 A IA EAS TC = 25C TC = 25C 64 3.5 A J dv/dt IS 20 V/ns PD TC = 25C 320 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C  2500 V   IDM, VDD  VDSS, TJ  150C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 20..120/4.5..27 N/lb 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features          Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 600 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 32A, Note 1  V 5.0 V 200 nA TJ = 125C 25 A 1 mA 105 m Applications       © 2014 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS99441F(5/14) IXFR64N60P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 20V, ID = 32A, Note 1 63 S 12 nF 1150 pF 80 pF 28 ns 23 ns 79 ns 24 ns 200 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 32A RG = 1 (External) Qg(on) Qgs ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 32A Qgd 70 nC 68 nC RthJC 0.39C/W RthCS 0.15C/W 1 = Gate 2,4 = Drain 3 = Source Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 256 A IF = IS , VGS = 0V, Note 1 1.5 V IF = 25A, -di/dt = 100A/s 0.6 VR = 100V, VGS = 0V 6.0 200 ns  μC A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR64N60P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 160 VGS = 10V 8V 7V 60 50 120 I D - Amperes I D - Amperes VGS = 10V 8V 140 40 30 6V 7V 100 80 60 20 6V 40 10 20 5V 5V 0 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 32A vs. Junction Temperature 30 3.2 VGS = 10V 7V 60 VGS = 10V 2.8 RDS(on) - Normalized 50 I D - Amperes 6V 40 30 20 10 5V 2.4 I D = 64A 2.0 1.6 I D = 32A 1.2 0.8 0 0.4 0 2 4 6 8 10 12 14 -50 -25 0 VDS - Volts 100 125 150 125 150 35 TJ = 125ºC 30 2.4 I D - Amperes RDS(on) - Normalized 75 40 3.2 VGS = 10V 50 Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 32A vs. Drain Current 2.8 25 TJ - Degrees Centigrade 2.0 25 20 15 1.6 10 TJ = 25ºC 1.2 5 0.8 0 0 20 40 60 80 100 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR64N60P Fig. 8. Transconductance Fig. 7. Input Admittance 100 80 100 g f s - Siemens 70 I D - Amperes TJ = - 40ºC 120 90 60 50 TJ = 125ºC 25ºC - 40ºC 40 25ºC 80 125ºC 60 40 30 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 VGS - Volts 60 70 80 90 100 140 160 180 200 Fig. 7. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 140 VDS = 300V 9 120 I D = 32A 8 100 I G = 10mA 7 VGS - Volts I S - Amperes 50 I D - Amperes 80 60 6 5 4 TJ = 125ºC 3 40 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 20 40 60 80 VSD - Volts 120 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 TJ = 150ºC f = 1 MHz TC = 25ºC Ciss 10,000 100µs 1ms I D - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs 1,000 Coss 100 25µs 10ms RDS(on) Limit 100ms DC 10 100 Crss 10 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFR64N60P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N60P3(W9) 5-15-14-F Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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