IXFR80N50P

PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM IXFR 80N50P VDSS ID25 RDS(on) trr (Electrically Isolated Back Surface) = 500 V = 45 A ≤ 72 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM Transient Continuous ± 40 ± 30 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 45 200 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 80 80 3.5 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD Maximum Ratings TC = 25° C 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 20..120/4.5..25 N/lb TJ TJM Tstg TL Maximum lead temperature for soldering FC Mounting force VISOL 50/60 Hz, RMS, 1 minute Weight 2500 V~ 5 g ISOPLUS247 (IXFR) E153432 G D S (Isolated Tab) G = Gate S = Source D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(