IXFR90N30

IXFR90N30 HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 300V 75A Ω 36mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 75 A IDM TC = 25°C, Pulse Width Limited by TJM 360 A IA EAS TC = 25°C TC = 25°C 90 3 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns PD TC = 25°C 417 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb 5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(ON) and QG Advantages Easy to Mount Space Savings High Power Density Applications Characteristic Values Min. Typ. Max. z BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 4mA 2.0 V IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V 100 μA 2 mA RDS(on) VGS = 10V, ID = 45A, Note 1 z z © 2013 IXYS CORPORATION, All Rights Reserved = Drain z z TJ = 125°C D Features z 4.5 Isolated Tab S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D V z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC & DC Motor Controls 36 mΩ DS98764A(6/13) IXFR90N30 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 45A, Note 1 70 S 10 nF 1800 pF 700 pF 42 ns 55 ns 100 ns 40 ns 360 nC 60 nC 180 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 45A RG = 2Ω (External) Qg(on) Qgs ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 45A Qgd 1 2 3 - Gate - Drain - Source 0.30 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 45A, VGS = 0V, Note 1 trr QRM IRM IF = 50A, -di/dt = -100A/μs VR = -100V, VGS = 0V Note 1.4 10 90 A 360 A 1.5 V 250 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.