IXFV12N120PS

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH12N120P IXFV12N120P IXFV12N120PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1200V 12A Ω 1.35Ω 300ns PLUS220 (IXFV) G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 12 A IDM TC = 25°C, pulse width limited by TJM 30 A IA TC = 25°C 6 A EAS TC = 25°C 500 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 543 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 °C z TJ TL Maximum lead temperature for soldering TSOLD Plastic body for 10s Md Mounting torque (TO-247) FC Mounting force (PLUS 220) Weight TO-247 PLUS 220 types 260 °C 1.13/10 Nm/lb.in. 11..65 / 2.5..14.6 N/lb. 6 4 g g G VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V G = Gate S = Source z z V ± 100 nA z 1.35 Ω International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings High power density Applications: z z z z 1.15 D = Drain TAB = Drain Advantages 25 μA 2 mA TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 6.5 D (TAB) D (TAB) z BVDSS S TO-247 (IXFH) z Characteristic Values Min. Typ. Max. D (TAB) PLUS220SMD (IXFV_S) z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99894A (04/08) IXFH12N120P IXFV12N120P IXFV12N120PS Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 5 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate input resistance Resistive Switching Times 9 S 5400 pF 290 pF 40 pF 1.5 Ω 34 ns 25 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 62 ns RG = 2Ω (External) 34 ns 103 nC 29 nC 41 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.23 °C/W RthJC RthCS PLUS220 (IXFV) Outline (TO-247, PLUS 220) 0.21 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 12 A ISM Repetitive, pulse width limited by TJM 48 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM TO-247 (IXFH) Outline 300 ns IF = 6A, -di/dt = 100A/μs VR = 100V, VGS = 0V 0.5 μC 6 A ∅P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PLUS220SMD (IXFV_S) Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH12N120P IXFV12N120P IXFV12N120PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 12 20 VGS = 10V 8V 16 14 7V 8 ID - Amperes ID - Amperes 10 6 6V 4 7V 12 10 8 6 6V 4 2 2 5V 0 5V 0 0 2 4 6 8 10 12 14 16 0 4 8 12 16 20 24 28 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to I D = 6A Value vs. Junction Temperature 12 32 2.8 VGS = 10V 7V VGS = 10V 2.6 10 RDS(on) - Normalized 2.4 8 ID - Amperes VGS = 10V 8V 18 6V 6 4 2.2 2.0 I D = 12A 1.8 I D = 6A 1.6 1.4 1.2 1.0 5V 2 0.8 0.6 0 0.4 0 5 10 15 20 25 30 35 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 6A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 13 2.4 12 TJ = 125ºC VGS = 10V 2.2 11 10 2.0 9 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 1.4 8 7 6 5 4 1.2 3 TJ = 25ºC 2 1.0 1 0.8 0 0 2 4 6 8 10 12 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 14 16 18 20 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFH12N120P IXFV12N120P IXFV12N120PS Fig. 7. Input Admittance Fig. 8. Transconductance 16 14 TJ = - 40ºC 14 12 12 g f s - Siemens ID - Amperes 10 TJ = 125ºC 25ºC - 40ºC 8 6 4 25ºC 10 8 125ºC 6 4 2 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 2 4 6 8 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 14 16 18 Fig. 10. Gate Charge VDS = 600V 9 35 I D = 6A 8 30 I G = 10mA 7 VGS - Volts IS - Amperes 12 10 40 25 20 15 TJ = 125ºC 6 5 4 3 10 TJ = 25ºC 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 10 20 VSD - Volts 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads 10 ID - Amperes Coss 100 Crss f = 1 MHz 10 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_12N120P(76) 04-01-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.