IXFV52N30PS

PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = =   RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A  73m 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1M VGSS VGSM Continuous Transient ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM IA EAS G D S Maximum Ratings 300 300 V V ± 20 ± 30 V V 52 150 A A TC = 25°C TC = 25°C 52 1 A J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in FC Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb Weight PLUS220 & PLUS220SMD TO-247 4 6 g g D (Tab) PLUS220SMD (IXFV_S) G S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C   V 5.0 V  100 nA 25 A 1 mA 73 m  Applications      © 2013 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99197G(10/13) IXFH52N30P IXFV52N30P IXFV52N30PS Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 20 Ciss Coss 30 S 3490 pF 550 pF 130 pF 24 ns 22 ns 60 ns 20 ns 110 nC 25 nC 53 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 52A RG = 4 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd (TO-247 & PLUS220) 0.25 Source-Drain Diode TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM 1 = Gate 2,4 = Drain 3 = Source 0.31 C/W RthJC RthCS PLUS220 (IXFV) Outline C/W Characteristic Values Min. Typ. Max. 52 A Repetitive, pulse width limited by TJM 150 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 25A, -di/dt = 100A/s VR = 100V, VGS = 0V 160 200 ns 800 nC 7 A TO-247 (IXFH) Outline P Note 1: Pulse test, t  300s, duty cycle, d  2%. e PLUS220SMD (IXFV_S) Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 1 = Gate 2 = Drain 3 = Source Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC VGS = 10V 8V 50 VGS = 10V 9V 140 7V 120 40 8V I D - Amperes I D - Amperes 100 30 6V 20 80 7V 60 40 6V 10 20 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.0 VGS = 10V 8V 7V 50 VGS = 10V 2.6 RDS(on) - Normalized I D - Amperes 40 6V 30 20 I D = 52A 2.2 I D = 26A 1.8 1.4 1.0 10 5V 0.6 0 0.2 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 4.0 VGS = 10V 50 40 TJ = 125ºC 3.0 I D - Amperes RDS(on) - Normalized 3.5 2.5 2.0 30 20 TJ = 25ºC 1.5 10 1.0 0.5 0 0 20 40 60 80 I D - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 100 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 7. Input Admittance Fig. 8. Transconductance 60 100 90 TJ = - 40ºC 50 80 g f s - Siemens I D - Amperes 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 25ºC 40 125ºC 30 20 30 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 10 20 30 40 VGS - Volts 50 60 70 80 90 100 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 160 10 VDS = 150V 9 140 I D = 26A 8 I G = 10mA 120 100 VGS - Volts I S - Amperes 7 80 60 TJ = 125ºC 5 4 3 TJ = 25ºC 40 6 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 VSD - Volts 60 80 100 120 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 RDS(on) Limit Ciss 100 I D - Amperes Capacitance - PicoFarads 40 1,000 C oss 25µs 100µs 10 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss f = 1 MHz 100 10ms DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFH52N30P IXFV52N30P IXFV52N30PS Fig. 13. Maximum Transient Thermal Impedance 10 1 Fig. 13. Maximum Transient Thermal Impedance aaaaaa Z (th )JC - ºC / W 0.5 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Second © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_52N30P(6S) 9-26-13 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.