IXFV74N20PS

IXFV74N20P IXFV74N20PS IXFH74N20P PolarHTTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 74A Ω 34mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 200 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 74 A IDM TC = 25°C, pulse width limited by TJM 200 A IA TC = 25°C 37 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns PD TC = 25°C 480 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. Weight PLUS220 & PLUS220SMD TO-247 4 6 g g G D S D (TAB) PLUS220SMD (IXFV_S) G D (TAB) G = Gate S = Source z BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.0 V z TJ = 150°C © 2008 IXYS CORPORATION, All rights reserved nA 25 250 μA μA International standard packages Fast recovery diode Avalanche rated Low package inductance - easy to drive and to protect Advantages z z ± 100 D = Drain TAB = Drain Features z Characteristic Values Min. Typ. Max. D (TAB) TO-247 (IXFH) z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S z Easy to mount Space savings High power density 34 mΩ DS99209F(05/08) IXFH74N20P IXFV74N20P IXFV74N20PS Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 30 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 1V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 4Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 44 S 3300 pF 800 pF 190 pF 23 ns 21 ns 60 ns 21 ns 107 nC 24 nC 52 nC 0.31 °C/W RthJC RthCS (TO-247, PLUS220) 0.25 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM PLUS220 (IXFV) Outline °C/W Characteristic Values Min. Typ. Max. 74 A Repetitive, pulse width limited by TJM 180 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 120 200 ns 0.40 μC 6 A TO-247 (IXFH) Outline ∅P Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PLUS220SMD (IXFV_S) Outline e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH74N20P IXFV74N20P IXFV74N20PS Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 200 80 VGS = 10V 70 160 50 40 30 8V 140 7V I D - Amperes I D - Amperes 60 6V 120 7V 100 80 60 20 6V 40 5V 10 5V 20 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 2 4 6 Fig. 3. Output Characteristics @ 150ºC 10 12 14 16 18 20 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 3.0 80 VGS = 10V 70 9V 8V VGS = 10V 2.6 R D S ( o n ) - Normalized 60 I D - Amperes 8 VD S - Volts VD S - Volts 7V 50 40 6V 30 20 2.2 ID = 74A 1.8 ID = 37A 1.4 1.0 5V 10 0.6 0 0 1 2 3 4 5 6 -50 7 -25 0 VD S - Volts 25 50 75 100 125 150 175 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value Fig. 6. Drain Current vs. Case Temperature vs. I D 5.0 80 4.5 70 VGS = 10V 4.0 15V - --- 60 TJ = 175ºC 3.5 I D - Amperes R D S ( o n ) - Normalized 9V VGS = 10V 180 9V 8V 3.0 2.5 2.0 50 40 30 20 1.5 1.0 TJ = 25ºC 0.5 10 0 0 20 40 60 80 I D 100 120 140 160 180 200 - Amperes © 2008 IXYS CORPORATION, All rights reserved -50 -25 0 25 50 75 100 125 T C - Degrees Centigrade IXFH74N20P IXFV74N20P IXFV74N20PS Fig. 7. Input Admittance Fig. 8. Transconductance 100 60 TJ = - 40ºC 90 50 70 g f s - Siemens I D - Amperes 80 60 50 40 TJ = 150ºC 30 25ºC - 40ºC 20 25ºC 40 150ºC 30 20 10 10 0 0 3.5 4.0 4.5 5.0 VG 5.5 S 6.0 6.5 7.0 0 7.5 20 10 180 9 VDS = 100V 160 8 ID = 37A 140 7 IG = 10m A VG S - Volts I S - Amperes D 80 100 120 - Amperes Fig. 10. Gate Charge 200 120 100 80 60 60 I Fig. 9. Source Current vs. Source-To-Drain Voltage 6 5 4 3 TJ = 150ºC 40 2 TJ = 25ºC 20 1 0 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 VS D 10 20 - Volts 30 Q Fig. 11. Capacitance 40 G 50 60 70 80 90 100 110 - nanoCoulombs Fig. 12. Forward-Bias Safe Operating Area 10000 1000 f = 1MHz TJ = 175ºC Ciss RDS(on) I D - Amperes Capacitance - picoFarads 40 - Volts C oss 1000 TC = 25ºC 25µs 100 100µs 1ms 10m s 10 DC Crss 100 1 0 5 10 15 20 25 30 35 40 V D S - Volts 10 100 1000 VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_74N20P(6S)6-15-05-D IXFH74N20P IXFV74N20P IXFV74N20PS Fig. 13. Maximum Transient Thermal Impedance 0.10 Z( t h )JC - ºC / W 1.00 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_74N20P(6S)6-15-05-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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