IXFV96N15PS

PolarHTTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 96 A Ω RDS(on) ≤ 24 mΩ ≤ 200 ns trr IXFH 96N15P IXFV 96N15P IXFV 96N15PS N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID(RMS) IDM IAR TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C 96 75 250 60 A A A A EAR EAS TC = 25° C TC = 25° C 40 1.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤175° C, RG = 4 Ω 10 V/ns PD TC = 25° C 480 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C 11...65/2.4...11 N/lb TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s FC Mounting force (PLUS220) Md Mounting torque (TO-247) Weight TO-247 PLUS220 1.13/10 Nm/lb.in. 6 4 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) PLUS220 (IXFV) G D VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % V 5.0 V ±100 nA 25 1000 µA µA 24 mΩ D (TAB) S PLUS220SMD (IXFV__S) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features l l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect l 150 (TAB) S Advantages VGS = 0 V, ID = 250 µA © 2006 IXYS All rights reserved D Characteristic Values Min. Typ. Max. BVDSS TJ = 175° C g g G l l Easy to mount Space savings High power density DS99208E(12/05) IXFH 96N15P IXFV 96N15P IXFV 96N15PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 35 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 45 S 3500 pF 1000 pF 280 pF Crss td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 33 ns td(off) RG = 4 Ω (External) 66 ns 18 ns 110 nC 26 nC 59 nC tf TO-247 (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source TAB - Drain Dim. Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.31° C/W RthJC RthCS Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC (TO-247, PLUS220) ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 96 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A, -di/dt = 100 A/µs 200 ns QRM VR = 100 V, VGS = 0 V 600 nC 6 A IRM PLUS220 (IXFV) Outline PLUS220SMD (IXFV__S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 96N15P IXFV 96N15P IXFV 96N15PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 100 VGS = 10V 9V 90 80 150 I D - Amperes 70 I D - Amperes VGS = 10V 175 60 8V 50 40 7V 30 9V 125 100 8V 75 50 20 10 7V 25 6V 0 6V 0 0 0.5 1 1.5 2 0 2.5 2 4 6 V D S - Volts Fig. 3. Output Characteristics @ 150ºC 12 14 16 18 20 2.8 VGS = 10V 9V 90 2.6 R D S ( o n ) - Normalized 70 60 8V 50 40 7V 30 6V 20 10 VGS = 10V 2.4 80 I D - Amperes 10 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 100 2.2 2 1.8 I D = 96A 1.6 I D = 48A 1.4 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 V D S - Volts 4 4.5 5 -50 5.5 -25 70 I D - Amperes 2.6 VGS = 10V 1.8 TJ = 25ºC VGS = 15V 1.4 75 100 125 150 175 External Lead Current Limit 60 TJ = 175ºC 2.2 50 80 3.4 3 25 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.8 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to R D S ( o n ) - Normalized 8 V D S - Volts 50 40 30 20 10 1 0 0.6 0 50 100 150 I D - Amperes © 2006 IXYS All rights reserved 200 250 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH 96N15P IXFV 96N15P IXFV 96N15PS Fig. 8. Transconductance Fig. 7. Input Adm ittance 180 140 50 120 g f s - Siemens I D - Amperes TJ = -40ºC 25ºC 150ºC 60 160 100 80 60 TJ = 150ºC 25ºC -40ºC 40 20 40 30 20 10 0 0 4 5 6 7 8 9 10 0 25 50 75 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 125 150 175 200 Fig. 10. Gate Charge 10 300 250 9 VDS = 75V 8 I D = 48A I G = 10mA 7 200 VG S - Volts I S - Amperes 100 I D - Amperes 150 100 6 5 4 3 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 V S D - Volts 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 R DS(on) Limit C iss I D - Amperes Capacitance - picoFarads f = 1MHz 1000 C oss 25µs 100 100µs 1ms 10ms 10 DC TJ = 175ºC C rss TC = 25ºC 100 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXFH 96N15P IXFV 96N15P IXFV 96N15PS Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.