IXFZ140N25T

Advance Technical Information IXFZ140N25T GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 100 A IDM TC = 25°C, Pulse Width Limited by TJM 400 A IA EAS TC = 25°C TC = 25°C 40 3 A J PD TC = 25°C 445 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 300 260 °C °C 20..120 / 4.5..27 N/lb. 3 g TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1mA TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force t = 1 minute t = 1 second Weight S G = Gate S = Source 250 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID = 60A, Note 1 D = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated Advantages Easy to Mount Space Savings High Power Density Applications V z 5.0 V ±200 nA z 50 μA 3 mA z 17 mΩ z z z z © 2010 IXYS CORPORATION, All Rights Reserved Isolated Tab z z Characteristic Values Min. Typ. Max. VGS = 0V, ID = 3mA D Features z BVDSS D S z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D G Symbol RDS(on) = = DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100267(05/10) IXFZ140N25T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 80 VDS = 10V, ID = 60A, Note 1 135 S 19 nF 1500 pF 185 pF 33 ns 29 ns 92 ns 22 ns 255 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 70A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 70A Qgd 90 nC 62 nC 0.28 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 140 A ISM Repetitive, Pulse Width Limited by TJM 560 A VSD IF = 60A, VGS = 0V, Note 1 1.3 V trr IRM IF = 70A, VGS = 0V QRM -di/dt = 100A/μs VR = 75V 9.3 200 ns A 600 nC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFZ140N25T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 140 320 VGS = 10V 8V 7V 120 80 ID - Amperes ID - Amperes 7V 240 100 6V 60 200 160 120 6V 40 80 20 40 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 2 4 6 8 10 12 14 16 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature 140 18 3.0 VGS = 10V 8V 7V 100 VGS = 10V 2.6 R DS(on) - Normalized 120 ID - Amperes VGS = 10V 8V 280 6V 80 60 2.2 I D = 140A 1.8 I D = 70A 1.4 1.0 40 5V 0.6 20 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 120 2.6 VGS = 10V 100 2.4 TJ = 125ºC 2.2 80 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 60 40 1.4 1.2 20 TJ = 25ºC 1.0 0.8 0 0 40 80 120 160 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 240 280 320 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFZ140N25T Fig. 7. Input Admittance 220 160 200 160 g f s - Siemens 120 TJ = - 40ºC 180 TJ = 125ºC 25ºC - 40ºC 140 ID - Amperes Fig. 8. Transconductance 180 100 80 60 25ºC 140 120 125ºC 100 80 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 VGS - Volts 100 120 140 160 180 200 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 350 VDS = 125V 9 300 I D = 70A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 80 200 150 6 5 4 TJ = 125ºC 100 3 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1.4 20 40 60 80 VSD - Volts 100 120 140 160 180 200 220 240 260 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 100,000 f = 1 MHz RDS(on) Limit 25µs 100 10,000 I D - Amperes Capacitance - PicoFarads Ciss Coss 1,000 100µs 10 TJ = 150ºC Crss 1ms TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFZ140N25T Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds DE475 (IXFZ) Outline G D D G S D D S S D D S © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: IXFZ140N25T (9W)5-25-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.