IXGH28N60A3

Advance Technical Information IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 28A VCE(sat)  1.4V Ultra Low Vsat PT IGBT for up to 5kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V G IC25 IC110 ICM TC = 25°C TC = 110°C TC = 25°C, 1ms 75 28 170 A A A TO-247 AD (IXGH) SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load ICM = 48 @VCE  VCES A PC TC = 25°C 190 W -55 ... +150 150 -55 ... +150 °C °C °C G = Gate E = Emitter 300 260 °C °C Features 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220) Weight TO-263 TO-220 TO-247 TO-220 (IXGP) G    C CE E C (Tab) C (Tab) C = Collector Tab = Collector Optimized for Low Conduction Losses Square RBSOA International Standard Packages Advantages    High Power Density Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 600 VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved  V 5.0 V 25 250 A A 100 nA 1.4 V V TJ = 125C IGES  1.3        Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Portection Circuits DS100725(5/16) IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 17 IC = 24A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 24A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff 30 S 1790 100 26 pF pF pF 66 13 24 nC nC nC 18 26 0.7 300 260 2.4 ns ns mJ ns ns mJ 20 26 1.4 470 400 4.2 ns ns mJ ns ns mJ 0.50 0.21 0.66 °C/W °C/W °C/W Inductive load, TJ = 25°C IC = 24A, VGE = 15V VCE = 480V, RG = 10 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = 24A, VGE = 15V VCE = 480V, RG = 10 Note 2 RthJC RthCS RthCS TO-220 TO-247 TO-220 Outline Pins: 1 - Gate 3 - Emitter 2 - Collector TO-247 Outline D A A2 B E Q R Notes: S A 0K M D B M D2 D1 D 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. 0P 0P1 R1 1 2 3 4 IXYS OPTION L1 C L E1 TO-263 Outline A1 c b b2 b4 e J MCAM 1 - Gate 2,4 - Collector 3 - Emitter 1 - Gate 2,4 - Collector 3 - Emitter ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 50 300 VGE = 15V 13V 11V 45 40 VGE = 15V I C - Amperes 9V 35 I C - Amperes 13V 250 30 25 20 7V 200 11V 150 100 15 10 9V 50 5 7V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 1.4 50 VGE = 15V 13V 11V 14 16 125 150 VGE = 15V 1.3 I C = 48A VCE(sat) - Normalized I C - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 40 10 VCE - Volts VCE - Volts 9V 30 7V 20 1.2 1.1 1.0 I C = 24A 0.9 10 0.8 5V I C = 12A 0.7 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 2.0 -25 0 25 VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 4.5 50 75 100 TJ - Degrees Centigrade Fig. 6. Input Admittance 100 90 TJ = 25ºC 4.0 80 70 I C = 48A 24A 12A 3.0 I C - Amperes VCE - Volts 3.5 2.5 2.0 60 50 40 TJ = 125ºC 25ºC - 40ºC 30 1.5 20 1.0 10 0.5 0 5 6 7 8 9 10 11 12 VGE - Volts © 2016 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 Fig. 7. Transconductance Fig. 8. Gate Charge 45 16 40 I C = 24A TJ = - 40ºC 25ºC 125ºC 35 30 I G = 10mA 12 VGE - Volts g f s - Siemens VCE = 300V 14 25 20 15 10 8 6 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 I C - Amperes 30 40 50 60 70 QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 10,000 50 f = 1 MHz Capacitance - PicoFarads Cies I C - Amperes 40 1,000 30 20 TJ = 125ºC 10 Coes 100 RG = 10 dv / dt < 10V / ns Cres 0 10 100 150 200 250 300 350 400 450 500 550 600 650 0 5 10 VCE - Volts 15 20 25 30 35 40 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGA28N60A3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Eoff 9 8 4.0 VCE = 480V 3.5 I C =40A 6 3.0 5 2.5 I C = 20A 4 2.0 3 1.5 1 10 30 50 70 90 110 130 I C = 40A VCE = 480V 5 I C = 20A 1.2 2 0.8 1 0.5 150 0 I C = 10A 25 35 45 540 2.8 520 4 1.6 TJ = 125ºC 1.2 2 0.8 1 0.4 TJ = 25ºC 0 Eon - MilliJoules 2.0 15 20 25 30 35 tfi 1200 580 460 900 I C = 10A, 20A, 40A 440 700 400 600 380 500 460 360 420 320 380 280 340 240 300 TJ = 25ºC 260 160 220 20 25 400 I C = 10A 30 50 70 90 110 300 150 130 30 I C - Amperes © 2016 IXYS CORPORATION, All Rights Reserved Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature tfi 480 35 40 td(off) 520 RG = 10Ω, VGE = 15V VCE = 480V 440 560 480 400 440 I C = 40A, 20A, 10A 360 400 320 360 280 320 240 280 200 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 240 125 t d(off) - Nanoseconds TJ = 125ºC 15 800 420 540 500 10 1100 1000 520 t d(off) - Nanoseconds t f i - Nanoseconds td(off) VCE = 480V 200 1300 VCE = 480V 10 620 440 400 0.0 125 RG - Ohms RG = 10Ω, VGE = 15V 480 115 340 t f i - Nanoseconds tfi 105 480 40 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 520 95 td(off) I C - Amperes 560 85 TJ = 125ºC, VGE = 15V 360 0.0 10 75 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 500 2.4 5 3 65 t d(off) - Nanoseconds VCE = 480V 6 Eoff - MilliJoules Eon RG = 10ΩVGE = 15V 3.2 t f i - Nanoseconds Eoff 55 0.4 TJ - Degrees Centigrade Fig. 14. Inductive Switching Energy Loss vs. Collector Current 7 1.6 3 RG - Ohms 8 2.4 2.0 4 1.0 2 2.8 RG = 10ΩVGE = 15V 6 I C = 10A 3.2 Eon E on - MilliJoules 7 Eoff 7 E on - MilliJoules Eoff - MilliJoules 4.5 TJ = 125ºC , VGE = 15V Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature 8 5.0 Eon Eoff - MilliJoules 10 IXGP28N60A3 IXGH28N60A3 IXGA28N60A3 IXGP28N60A3 IXGH28N60A3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 130 tri 130 50 td(on) 45 TJ = 125ºC, VGE = 15V 110 I C = 40A 40 I C = 20A 50 30 50 50 70 90 110 130 10 150 45 18 15 17 16 I C = 10A 25 35 45 55 65 75 85 95 105 115 15 125 22 TJ = 125ºC, 25ºC 21 30 20 25ºC < TJ < 125ºC 25 19 20 18 15 17 10 t d(on) - Nanoseconds t r i - Nanoseconds 20 23 VCE = 480V 35 19 I C = 20A 24 td(on) RG = 10 , VGE = 15V 40 25 20 TJ - Degrees Centigrade Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri VCE = 480V 30 5 RG - Ohms 50 21 RG = 10, VGE = 15V 10 10 30 35 td(on) 30 I C = 10A 10 t r i - Nanoseconds t r i - Nanoseconds 70 22 tri t d(on) - Nanoseconds 70 t d(on) - Nanoseconds 90 I C = 40A 24 23 110 VCE = 480V 90 Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature 16 10 15 20 25 30 35 40 I C - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXG_28N60A3 (45) 7-02-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.